Comparator, ad converter, solid-state imaging device, electronic apparatus, and method of controlling comparator

ABSTRACT

The comparator includes a comparison unit, a positive feedback circuit, and a current limiting unit. The comparison unit compares the voltage of an input signal and the voltage of a reference signal, and outputs a comparison result signal. The positive feedback circuit increases the transition speed at the time when the comparison result signal is inverted. The current limiting unit limits the current flowing in the comparison unit after the inversion of the comparison result signal. The present disclosure can be applied to comparators, for example.

TECHNICAL FIELD

The present disclosure relates to comparators, AD converters,solid-state imaging devices, electronic apparatuses, and comparatorcontrol methods, and more particularly, to a comparator, an ADconverter, a solid-state imaging device, an electronic apparatus, and acomparator control method that can reduce power consumption whileincreasing the determination speed of the comparator.

BACKGROUND ART

In a case where AD conversion is performed in a limited area such as anarea in a pixel by a signal read method designed for a solid-stateimaging device, the method with the highest area efficiency is an ADconversion method of an integral type (sloped type) realized by acomparator and a digital circuit in the subsequent stage.

Non-Patent Documents 1 and 2 have been suggested as technologies forrealizing AD conversion in a limited area by using an AD conversionmethod of an integral type. For example, Non-Patent Document 1 disclosesa circuit structure in which a digital circuit in a later stage is aDRAM circuit, and a slope signal is input to a comparator more thanonce. When 8-bit AD conversion is performed, for example, the same slopesignal is input to the comparator eight times. The operation to store acode of “0” or “1” into the DRAM circuit at the time when the outputfrom the comparator is inverted is repeated eight times. When thecomparison in the entire area is finished, the codes are read out.

CITATION LIST Non-Patent Documents

Non-Patent Document 1: D. Yang, B. Fowler, and A. El Gamal, “A Nyquistrate pixel level ADC for CMOS image sensors,” in Proc. IEEE 1998 CustomIntegrated Circuits Conf., Santa Clara, Calif., May 1998, pp. 237-240.

Non-Patent Document 2: S. Kleinfelder, S. Lim, X. Liu, and A. El Gamal,“A 10 kframe/s 0.18 μm CMOS digital pixel sensor with pixel-levelmemory,” IEEE International Solid-State Circuits Conference, vol. XLIV,pp. 88-89, February 2001.

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

In a case where AD converters are arranged for the respective pixelcolumns in a column parallel layout, a relatively high degree of freedomis allowed in terms of area. In a case where an AD converter is providedin each pixel, however, the circuit accommodation area is limited, andtherefore, it is difficult to manufacture comparators that adequatelysatisfy requirements. For example, the determination speed of thecomparators might become lower, or power consumption might increase ifperformance is improved.

The present disclosure is made in view of these circumstances, and aimsto reduce power consumption while increasing the determination speed ofa comparator.

Solutions to Problems

A comparator as a first aspect of the present disclosure includes: acomparison unit that compares the voltage of an input signal with thevoltage of a reference signal, and outputs a comparison result signal; apositive feedback circuit that increases the speed of transition at thetime when the comparison result signal is inverted; and a currentlimiting unit that limits the current flowing in the comparison unitafter the inversion of the comparison result signal.

A method of controlling a comparator as a second aspect of the presentdisclosure includes: a comparison unit comparing the voltage of an inputsignal with the voltage of a reference signal, and outputting acomparison result signal; a positive feedback circuit increasing thespeed of transition at the time when the comparison result signal isinverted; and a current limiting unit limiting the current flowing inthe comparison unit after the inversion of the comparison result signal,the comparator including the comparison unit, the positive feedbackcircuit, and the current limiting unit.

In the first and second aspects of the present disclosure, the voltageof an input signal is compared with the voltage of a reference signal,and a comparison result signal is output. The speed of transition at thetime when the comparison result signal is inverted is increased. Afterthe inversion of the comparison result signal, the current flowing inthe comparison unit is limited.

An AD converter as a third aspect of the present disclosure includes: acomparator including: a comparison unit that compares the voltage of aninput signal with the voltage of a reference signal, and outputs acomparison result signal; a positive feedback circuit that increases thespeed of transition at the time when the comparison result signal isinverted; and a current limiting unit that limits the current flowing inthe comparison unit after the inversion of the comparison result signal;and a storage unit that stores the code input signal at the time whenthe comparison result signal is inverted, and outputs the code inputsignal.

In the third aspect of the present disclosure, the voltage of an inputsignal is compared with the voltage of a reference signal, and acomparison result signal is output. The speed of transition at the timewhen the comparison result signal is inverted is increased. After theinversion of the comparison result signal, the current flowing in thecomparison unit is limited. The code input signal at the time when thecomparison result signal is inverted is stored and output.

A solid-state imaging device as a fourth aspect of the presentdisclosure includes: an AD converter including: a comparator including:a comparison unit that compares the voltage of an input signal with thevoltage of a reference signal, and outputs a comparison result signal; apositive feedback circuit that increases the speed of transition at thetime when the comparison result signal is inverted; and a currentlimiting unit that limits the current flowing in the comparison unitafter the inversion of the comparison result signal; and a storage unitthat stores the code input signal at the time when the comparison resultsignal is inverted, and outputs the code input signal as a code outputsignal; and a pixel circuit that outputs a charge signal as the inputsignal to the comparison unit, the charge signal having been generatedby receiving light entering a pixel and photoelectrically converting thelight.

An electronic apparatus as a fifth aspect of the present disclosureincludes a solid-state imaging device including: an AD converterincluding: a comparator including: a comparison unit that compares thevoltage of an input signal with the voltage of a reference signal, andoutputs a comparison result signal; a positive feedback circuit thatincreases the speed of transition at the time when the comparison resultsignal is inverted; and a current limiting unit that limits the currentflowing in the comparison unit after the inversion of the comparisonresult signal; and a storage unit that stores the code input signal atthe time when the comparison result signal is inverted, and outputs thecode input signal as a code output signal; and a pixel circuit thatoutputs a charge signal as the input signal to the comparison unit, thecharge signal having been generated by receiving light entering a pixeland photoelectrically converting the light.

In the fourth and fifth aspects of the present disclosure, the voltageof an input signal is compared with the voltage of a reference signal,and a comparison result signal is output. The speed of transition at thetime when the comparison result signal is inverted is increased. Afterthe inversion of the comparison result signal, the current flowing inthe comparison unit is limited. The code input signal at the time whenthe comparison result signal is inverted is stored and output as a codeoutput signal. At the pixel circuit, the charge signal generated byreceiving light entering the pixel and photoelectrically converting thelight is output as the input signal to the comparison unit.

The comparator, the AD converter, the solid-state imaging device, andthe electronic apparatus may be independent devices, or may be modulesto be incorporated into some other device.

Effects of the Invention

According to the first through fifth aspects of the present disclosure,power consumption can be reduced while the determination speed of thecomparator is increased.

The effects of the present technology are not limited to the effectsdescribed herein, and may include any of the effects described in thepresent disclosure.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram schematically showing the structure of a solid-stateimaging device according to the present disclosure.

FIG. 2 is a block diagram showing an example structure of a pixel unit.

FIG. 3 is a block diagram showing a specific example structure of acomparator.

FIG. 4 is a circuit diagram of the comparator.

FIG. 5 is a diagram showing input/output signals of the comparator.

FIG. 6 is a block diagram showing a first embodiment of the ADC.

FIG. 7 is a circuit diagram of the first embodiment of the ADC.

FIG. 8 is a diagram for explaining operation and control of the entireADC 42.

FIG. 9 is a diagram for explaining a case where a code input signal is amultilevel signal.

FIG. 10 is a diagram for explaining a case where a code input signal isa multilevel signal.

FIG. 11 is a diagram for explaining a case where a code input signal isa multilevel signal.

FIG. 12 is a diagram for explaining a case where a code input signal isa multilevel signal.

FIG. 13 is a circuit diagram showing a second embodiment of the ADC.

FIG. 14 is a diagram showing an example layout of the latch circuit ofthe ADC according to the second embodiment.

FIG. 15 is a circuit diagram showing a third embodiment of the ADC.

FIG. 16 is a circuit diagram showing a fourth embodiment of the ADC.

FIG. 17 is a circuit diagram showing a fifth embodiment of the ADC.

FIG. 18 is a circuit diagram showing a first embodiment of a pixel.

FIG. 19 is a timing chart for explaining operation of the pixelaccording to the first embodiment.

FIG. 20 is a circuit diagram showing a second embodiment of a pixel.

FIG. 21 is a circuit diagram showing a third embodiment of a pixel.

FIG. 22 is a timing chart for explaining operation of the pixelaccording to the third embodiment.

FIG. 23 is a circuit diagram showing a fourth embodiment of a pixel.

FIG. 24 is a timing chart for explaining operation of the pixelaccording to the fourth embodiment.

FIG. 25 is a circuit diagram showing a first embodiment of pixelsharing.

FIG. 26 is a timing chart for explaining operation of shared pixelsaccording to the first embodiment.

FIG. 27 is a circuit diagram showing a second embodiment of pixelsharing.

FIG. 28 is a timing chart for explaining operation of shared pixelsaccording to the second embodiment.

FIG. 29 is a diagram for explaining a read sequence of shared pixels.

FIG. 30 is a diagram for explaining a read sequence of shared pixels.

FIG. 31 is a diagram for explaining a shared pixel read sequence.

FIG. 32 is a circuit diagram showing a third embodiment of pixelsharing.

FIG. 33 is a timing chart for explaining operation of shared pixelsaccording to the third embodiment.

FIG. 34 is a circuit diagram showing a fourth embodiment of pixelsharing.

FIG. 35 is a diagram for explaining vertical division control.

FIG. 36 is a diagram for explaining an example structure using twosemiconductor substrates.

FIG. 37 is a diagram for explaining an example structure using twosemiconductor substrates.

FIG. 38 is a diagram for explaining an example structure using twosemiconductor substrates.

FIG. 39 is a diagram for explaining an example structure using twosemiconductor substrates.

FIG. 40 is a diagram for explaining an example structure using threesemiconductor substrates.

FIG. 41 is a diagram for explaining an example structure using threesemiconductor substrates.

FIG. 42 is a diagram for explaining an example structure using threesemiconductor substrates.

FIG. 43 is a diagram for explaining an example structure using a sidesubstrate.

FIG. 44 is a diagram for explaining an example structure using a sidesubstrate.

FIG. 45 is a diagram for explaining an example structure using a sidesubstrate.

FIG. 46 is a circuit diagram showing a fifth embodiment of a pixel.

FIG. 47 is a timing chart for explaining operation of the pixelaccording to the fifth embodiment.

FIG. 48 is a circuit diagram showing a first example structure in whichpixel sensitivity is variable.

FIG. 49 is a circuit diagram showing a second example structure in whichpixel sensitivity is variable.

FIG. 50 is a diagram for explaining control to change the slopeinclination.

FIG. 51 is a diagram for explaining control to change the frequency of acode input signal.

FIG. 52 is a diagram for explaining addition of a decoupling capacity.

FIG. 53 is a diagram for explaining driving by bit-number slope inputs.

FIG. 54 is a diagram for explaining driving by bit-number slope inputs.

FIG. 55 is a circuit diagram showing the fifth embodiment of a pixel.

FIG. 56 is a diagram for explaining control on the measures againstlight leakage.

FIG. 57 is a diagram for explaining a structure that changes the timesfor inversion operations.

FIG. 58 is a diagram showing the circuit structure of a column ADC.

FIG. 59 is a diagram showing the circuit structure of a column ADC.

FIG. 60 is a timing chart for explaining operation of a column ADC.

FIG. 61 is a diagram showing an example layout of black output pixels inblack level correction.

FIG. 62 is a diagram for explaining a method of correcting black levels.

FIG. 63 is a diagram showing another example layout of black outputpixels in black level correction.

FIG. 64 is a diagram for explaining an example of control on black levelcorrection.

FIG. 65 is a circuit diagram showing a seventh embodiment of a pixel.

FIG. 66 is a diagram for explaining latch signal interleaved driving.

FIG. 67 is a timing chart for explaining latch signal interleaveddriving.

FIG. 68 is a diagram for explaining all-bit simultaneous read driving.

FIG. 69 is a timing chart for explaining all-bit simultaneous readdriving.

FIG. 70 is a diagram showing an example interconnect layout of a latchcircuit when interleaved driving is performed.

FIG. 71 is a block diagram showing an example structure of an imagingapparatus as an electronic apparatus according to the presentdisclosure.

MODES FOR CARRYING OUT THE INVENTION

The following is a description of modes (hereinafter referred to asembodiments) for carrying out the present disclosure. Explanation willbe made in the following order.

1. General Example Structure of a Solid-State Imaging Device

2. Specific Example Structure of the Comparator

3. First Embodiment of the ADC

4. Second Embodiment of the ADC

5. Third Embodiment of the ADC

6. Fourth Embodiment of the ADC

7. Fifth Embodiment of the ADC

8. First Embodiment of the Pixel Unit

9. Second Embodiment of the Pixel Unit

10. Third Embodiment of the Pixel Unit

11. Fourth Embodiment of the Pixel Unit

12. First Embodiment of Pixel Sharing

13. Second Embodiment of Pixel Sharing

14. Third Embodiment of Pixel Sharing

15. Fourth Embodiment of Pixel Sharing

16. Multiple Substrate Configuration 1

17. Multiple Substrate Configuration 2

18. Multiple Substrate Configuration 3

19. Fifth Embodiment of the Pixel Unit

20. Sixth Embodiment of the Pixel Unit

21. Example Structure of a Column ADC

22. Streaking Correction Calculation

23. Seventh Embodiment of the Pixel Unit

24. Latch Circuit Output Control

25. Example Application to an Electronic Apparatus

<1. General Example Structure of a Solid-State Imaging Device>

FIG. 1 schematically shows the structure of a solid-state imaging deviceaccording to the present disclosure.

The solid-state imaging device 1 in FIG. 1 includes a pixel array unit22 in which pixels 21 are arranged in a two-dimensional array on asemiconductor substrate 11 made of silicon (Si) as a semiconductor. Apixel drive circuit 23, a D/A converter (DAC) 24, a vertical drivecircuit 25, a sense amplifier unit 26, an output unit 27, and a timinggenerator circuit 28 are formed around the pixel array unit 22 on thesemiconductor substrate 11.

As shown in FIG. 2, each pixel 21 includes a pixel circuit 41 and an ADC42. The pixel circuit 41 includes a photoelectric conversion unit thatgenerates and stores a charge signal corresponding to an amount ofreceived light, and outputs an analog pixel signal SIG obtained at thephotoelectric conversion unit to the ADC 42. The ADC 42 converts theanalog pixel signal SIG supplied from the pixel circuit 41 to a digitalsignal.

The AD converter (ADC) 42 includes a comparator 51 and a latch storageunit 52. The comparator 51 compares a reference signal REF supplied fromthe DAC 24 with the pixel signal SIG, and outputs an output signal VCOas the signal indicating the comparison result. When the referencesignal REF and the pixel signal SIG become equal (in voltage), thecomparator 51 inverts the output signal VCO.

A code value BITXn (n being an integer of 1 to N) indicating the currenttime is input as an input signal to the latch storage unit 52. The codevalue BITXn at the time when the output signal VCO of the comparator 51is inverted is held in the latch storage unit 52, and is then read as anoutput signal Coln. As a result, a digital value obtained by digitizingthe analog pixel signal SIG into an N-bit value is output from the ADC42.

The pixel drive circuit 23 in FIG. 1 drives the pixel circuit 41 and thecomparator 51 in each pixel 21. The DAC 24 generates the referencesignal REF that is a slope signal having its level (voltage)monotonically decreasing with time, and supplies the reference signalREF to each pixel 21. The vertical drive circuit 25 outputs digitalpixel signals SIG generated in the pixels 21 to the sense amplifier unit26 in predetermined order based on timing signals supplied from thetiming generator circuit 28. The digital pixel signals SIG output fromthe pixels 21 are amplified by the sense amplifier unit 26, and are thenoutput from the output unit 27 to the outside of the solid-state imagingdevice 1. The output unit 27 performs predetermined digital signalprocessing such as a black level correction process to correct blacklevels and a correlated double sampling (CDS) process, and outputs theresultant signals to the outside.

The timing generator circuit 28 is formed with a timing generator or thelike that generates various kinds of timing signals, and supplies thegenerated various timing signals to the pixel drive circuit 23, the DAC24, the vertical drive circuit 25, and the like.

The solid-state imaging device 1 can have the above described structure.Although all the circuits constituting the solid-state imaging device 1are formed on the single semiconductor substrate 11 in FIG. 1 asdescribed above, the circuits constituting the solid-state imagingdevice 1 are formed on multiple semiconductor substrates 11 as will bedescribed later.

<2. Specific Example Structure of the Comparator>

FIG. 3 is a block diagram showing a specific example structure of thecomparator 51.

The comparator 51 includes a differential amplifier circuit 61, apositive feedback circuit (PFB) 62, and a current limiting unit 63.

FIG. 4 is a circuit diagram showing the circuit structure of thedifferential amplifier circuit 61, the positive feedback circuit (PFB)62, and the current limiting unit 63.

The differential amplifier circuit 61 includes transistors 81 and 82 asa differential pair, transistors 83 and 84 that form a current mirror,and a transistor 85 as a constant current source that supplies a currentIB in accordance with an input bias current Vb. A transistor 86 servingas the current limiting unit 63 is connected between the transistors 82and 84.

The transistors 81, 82, and 85 are formed with negative channel MOS(NMOS) transistors, and the transistors 83, 84, and 86 are formed withpositive channel MOS (PMOS) transistors.

As for the transistors 81 and 82 forming a differential pair, thereference signal REF output from the DAC 24 is input to the gate of thetransistor 81, and a pixel signal SIG output from the pixel circuit 41in the pixel 21 is input to the gate of the transistor 82. The sourcesof the transistors 81 and 82 are connected to the drain of thetransistor 85, and the source of the transistor 85 is connected to GND.

The drain of the transistor 81 is connected to the gates of thetransistors 83 and 84, which form the current mirror circuit, and to thedrain of the transistor 83. The drain of the transistor 82 is connectedto the drain of the transistor 86 as the current limiting unit 63. Thesources of the transistors 83 and 84 are connected to a power supplyvoltage Vdd.

The source of the transistor 86 as the current limiting unit 63 isconnected to the drain of the transistor 84 forming the current mirrorcircuit, and the gate of the transistor 86 is connected to apredetermined connecting point in the positive feedback circuit 62.

The positive feedback circuit 62 is formed with three transistors 91through 93. Here, the transistor 91 is formed with a PMOS transistor,and the transistors 92 and 93 are formed with NMOS transistors.

The connecting point between the drain of the transistor 84 and thesource of the transistor 86 serves as the output end of the differentialamplifier circuit 61, and is connected to the gate of the transistor 91and the drain of the transistor 92 in the positive feedback circuit 62.An output signal VCO output from the differential amplifier circuit 61is output to the latch storage unit 52 (FIG. 2) in the stage after thecomparator 51, and is also output to the gate of the transistor 91 inthe positive feedback circuit 62.

The source of the transistor 91 is connected to the power supply voltageVdd, and the drain of the transistor 91 is connected to the gate of thetransistor 92, the drain of the transistor 93, and the gate of thetransistor 86 as the current limiting unit 63. The sources of thetransistors 92 and 93 are connected to GND.

Operation of the comparator 51 having the above structure is nowdescribed.

The differential amplifier circuit 61 compares the reference signal REFinput to the gate of the transistor 81 with a pixel signal SIG input tothe gate of the transistor 82. When the reference signal REF and thepixel signal SIG become equal (in voltage), the differential amplifiercircuit 61 inverts the output signal VCO from Hi to Low.

In a case where the output signal VCO is inverted from Hi to Low, thetransistor 91 of the positive feedback circuit 62 is turned on, and adrain voltage is generated. Since the drain of the transistor 91 isconnected to the gate of the transistor 92, the transistor 92 is turnedon. As the transistor 92 is turned on, the gate of the transistor 91 andthe output end of the comparator 51 are connected to GND, andaccordingly, the output signal VCO is rapidly lowered to GND. With this,the transistor 91 enters a more intensive on-state, and, at the sametime, the transistor 92 enters a more intensive on-state.

FIG. 5 is a diagram showing signals that are input to the comparator 51,and signals that are output from the comparator 51.

If the positive feedback circuit 62 is not provided in the comparator51, the output signal VCO is slowly inverted as indicated by a dashedline in FIG. 5, and therefore, it takes time to detect the outputinversion.

As the positive feedback circuit 62 is provided, on the other hand, theoutput signal VCO is rapidly lowered to GND as described above and asindicated by a solid line in FIG. 5, and the transition speed of theoutput signal VCO is increased. As a result, the determination speed ofthe comparator 51 can be increased.

In the positive feedback circuit 62, once turned on, the transistors 91and 92 are not returned to the original state. As shown in FIG. 5, thetransistor 93 is turned on with an initialization signal INI in thefirst stage of the comparing operation, so that the positive feedbackcircuit 62 is put into the initialization state.

The functions of the current limiting unit 63 are now described.

If the transistor 86 as the current limiting unit 63 is not provided,the very large current that flows from the transistor 84 of thedifferential amplifier circuit 61 to the transistor 92 of the positivefeedback circuit 62 and increases the speed of the output signal VCOremains flowing.

On the other hand, as the transistor 86 is inserted as the currentlimiting unit 63 between the transistors 82 and 84 in the differentialamplifier circuit 61, the very large current that flows from thetransistor 84 of the differential amplifier circuit 61 to the transistor92 of the positive feedback circuit 62 is limited after the inversion ofthe output signal VCO. The size of the limited current is determined bythe current flowing in the transistors 83 and 84 of the current mirrorof the differential amplifier circuit 61. The current flowing in thetransistors 83 and 84 of the current mirror is determined by the inputbias current Vb of the transistor 85 as the constant current source, andthus becomes a current IB flowing in the transistor 85.

If the reference signal REF is first larger than the pixel signal SIG inan operation of the comparator 51, the current IB limited by the inputbias current Vb flows. When the reference signal REF and the pixelsignal SIG become equal, a very large current momentarily flows in thecomparator 51, and the speed of inversion of the output signal VCO isincreased. After the output signal VCO is inverted, the current IBlimited by the input bias current Vb and its mirror current IB flow inthe comparator 51. As the current limiting unit 63 is provided, thecurrent flowing in the comparator 51 is restricted to twice the initialcurrent IB after comparison, so that power consumption is restrained.

That is, with the comparator 51 provided in the pixel 21 of thesolid-state imaging device 1, power consumption can be reduced while thedetermination speed of the comparator 51 is increased.

<3. First Embodiment of the ADC>

FIG. 6 is a block diagram showing a first embodiment of the ADC 42, andshows an example structure of the entire ADC 42 in which the latchstorage unit 52 is added to the specific structure of the comparator 51shown in FIG. 3.

FIG. 7 is a circuit diagram of the entire ADC 42 in which the circuitstructure of the latch storage unit 52 is added to the circuit diagramof the comparator 51 shown in FIG. 4.

FIG. 8 shows the signals indicating operation and control of the entireADC 42, including signals indicating operation and control of the latchstorage unit 52 as well as the input/output signals of the comparator 51shown in FIG. 5.

In the description of FIG. 6 and the later drawings, the componentscorresponding to the components already described are denoted by thesame reference numerals as those used for the already describedcomponents, and explanation of them will be skipped as appropriate.

In the latch storage unit 52, N latch circuits (data storage units)101-1 through 101-N are provided for the N bits corresponding to thenumber of AD conversion bits, as shown in the circuit diagram in FIG. 7.In the description below, the N latch circuits 101-1 through 101-N willbe written simply as the latch circuits 101, unless there is a need todistinguish them from one another.

An output signal VCO of the comparator 51 is input to the gates oftransistors 111 of the N latch circuits 101-1 through 101-N.

A code input signal (a code value) BITXn of 0 or 1 indicating thecurrent time is input to the drain of the transistor 111 of the latchcircuit 101-n of the nth bit. The code input signal BITXn is a bitsignal such as a gray code. The latch circuit 101-n stores data LATn atthe time when the output signal VCO of the comparator 51 input to thegate of the transistor 111 is inverted.

A read control signal WORD is input to the gate of a transistor 112 ofthe latch circuit 101-n of the nth bit. When the time to read the latchcircuit 101-n of the nth bit comes, the control signal WORD becomes Hias shown in FIG. 8, and a latch signal (a code output signal) Coln ofthe nth bit is output from a latch signal output line 114.

As the latch storage unit 52 has the above described structure, the ADC42 can operate as an integral AD converter.

In the above described example, the output signal VCO is driven with aone-time slope signal (reference signal REF), and is inputsimultaneously to the N latch circuits 101-1 through 101-N of the Nbits, which perform processing in parallel. However, a slope signal maybe input to one latch circuit 101 N times, so that N bits can besubjected to AD conversion. In this case, the code input signal BITXn isa different signal every time.

<Example Case Where the Code Input Signal BITXn is a Multilevel Signal>

Although the code input signal BITXn is a binary signal (voltage) of 0or 1 in the above described example, the code input signal BITXn may bea multilevel signal with three or more levels.

FIG. 9 is a circuit diagram showing a state where the latch circuit101-n stores data, which is a state after the output signal VCO isinverted. FIG. 10 is a circuit diagram of the latch circuit 101-n in astate where the control signal WORD is Hi, and stored data is beingread. Here, an example where the power supply voltage Vdd is supplied tothe latch signal output line 114 in the initial state, and a four-levelsignal is input as the code input signal BITXn as shown in FIG. 9 isdescribed.

Where Vin represents the gate voltage of a transistor 113 in the datastoring state shown in FIG. 9, the amount Q of the total charge storedin parasitic capacitances Cs and Cb generated in the latch circuit 101can be expressed as Q=Vi*Cb+(Vi−Vdd)*Cs.

When the control signal WORD is Hi, and the stored data is being read,the latch circuit 101 is connected to the current source 115 via thelatch signal output line 114 as shown in FIG. 10, and the latch circuit101 operates as an operational amplifier and subjects the gate of thetransistor 113 to feedback as shown in FIG. 11.

Where Vx represents the gate voltage of the transistor 113, Vorepresents the signal (voltage) output from the latch signal output line114, and Av represents the gain in the state where the latch circuit 101operates as an operational amplifier, the amount Q of the total chargestored in the parasitic capacitances Cs and Cb can be expressed asQ=Vx*Cb+(Vx−Vo)*Cs, and the output voltage Vo can be expressed asVo=−Av*Vx.

When Vo is calculated according to the relational expressions,Q=Vx*Cb+(Vx−Vo)*Cs and Vo=−Av*Vx, Vo can be expressed asVo={Cs*Vdd−(Cs+Cb)*Vi}/{(Cb+Cs)/Av+Cs}. If the gain Av is infinite, Vois expressed as Vo=Vdd−{(Cb+Cs)/Cs}*Vi, and accordingly, the outputvoltage Vo becomes a four-level value corresponding to an input voltageVin based on the initial voltage Vdd, as shown in FIG. 12.

As the code input signal BITXn to be input to each latch circuit 101 isa multilevel signal as described above, the total number of latchcircuits 101 can be reduced, and the circuit area of the ADC 42 can bereduced.

<4. Second Embodiment of the ADC>

FIG. 13 is a circuit diagram showing a second embodiment of the ADC 42.

In the second embodiment of the ADC 42 shown in FIG. 13, the latchcircuits 101-1 through 101-N in the latch storage unit 52 are changed tolatch circuits 101′-1 through 101′-N, and the other aspects are the sameas those of the first embodiment.

In each latch circuit 101 of the first embodiment, the input line forinputting the code input signal BITXn and the output line for outputtingthe latch signal Coln are provided independently of each other. In eachlatch circuit 101′ of the second embodiment, on the other hand, theinput line and the output line are integrated.

That is, the drain of the transistor 111 to which the output signal VCOis input is connected to the latch signal output line 114 to which thedrain of the transistor 112 having the control signal WORD to be inputthereto is also connected.

FIG. 14 is a diagram showing an example layout in a case where eachlatch circuit 101′ of the second embodiment is formed on thesemiconductor substrate 11.

FIG. 14 shows the gate 111G, the source 111S, and the drain 111D of thetransistor 111, the gate 112G, the source 112S, and the drain 112D ofthe transistor 112, and the gate 113G, the source 113S, and the drain113D of the transistor 113.

As shown in FIG. 14, the drain 111D of the transistor 111 and the drain112D of the transistor 112 are both connected to the latch signal outputline 114. The source 111S of the transistor 111 and the gain 113G of thetransistor 113 are connected by an interconnecting line 116.

The drain region and the source region formed in the semiconductorsubstrate 11 are formed with a diffusion layer (impurity regions).

As described above, the drain 111D of the transistor 111 and the drain112D of the transistor 112 are integrated and connected to the singlelatch signal output line 114. Consequently, the number ofinterconnecting lines can be reduced, and the parasitic capacitancebetween adjacent components can be reduced. Thus, the load is reduced,and a high-speed operation and an area reduction can be realized.

<5. Third Embodiment of the ADC>

FIG. 15 is a circuit diagram showing a third embodiment of the ADC 42.

The third embodiment of the ADC 42 differs from the second embodimentshown in FIG. 13 in that an inverter 121 formed with an NMOS transistor131 and a PMOS transistor 132 is further provided in a stage after thepositive feedback circuit 62 in the comparator 51.

Since the output signal VCO of the comparator 51 is a signal inverted bythe inverter 121, the input of the inverter 121 is connected not to thegate of the transistor 91 of the positive feedback circuit 62 but to thedrain of the transistor 91. That is, in the third embodiment, a signalobtained by inverting the output signal VCO of the positive feedbackcircuit 62 of the second embodiment is the input signal of the inverter121.

Since the code input signal BITXn to be written into the latch circuit101′ is a signal that transits at high speed, the code input signalBITXn sways the output of the comparator 51 via the parasiticcapacitance between the gate and the drain of the transistor 111, if thetransistor 111 of the latch circuit 101′ and the transistor 91 of thepositive feedback circuit 62 are connected directly to each other.

In view of this, the inverter 121 is interposed as shown in FIG. 15, sothat the influence of the code input signal BITXn can be reduced.

<6. Fourth Embodiment of the ADC>

FIG. 16 is a circuit diagram showing a fourth embodiment of the ADC 42.

In the fourth embodiment of the ADC 42, a transistor 141 of the sametype (PMOS) as the transistor 86 forming the current limiting unit 63 isfurther provided in a position symmetrical to the transistor 86 formingthe current limiting unit 63, or between the drain of the transistor 81to which the reference signal REF is input and the drain of thetransistor 83 of the current mirror in the differential amplifiercircuit 61 in the comparator 51. The gate of the transistor 141 isconnected to GND.

In the first through third embodiments described above, the transistor86 exists only at one side (right side) in the differential amplifiercircuit 61, and therefore, the characteristics might differ between theright side and the left side. In view of this, the transistor 141 of thesame type (PMOS) as the transistor 86 serving as the current limitingunit 63 is provided as a dummy transistor, so that generation of anydifference in characteristics can be prevented.

<7. Fifth Embodiment of the ADC>

FIG. 17 is a circuit diagram showing a fifth embodiment of the ADC 42.

In the fifth embodiment of the ADC 42, a transistor 151 of the same type(PMOS) as the transistor 86 as the current limiting unit 63 is providedas a dummy transistor in a position symmetrical to the transistor 86forming the current limiting unit 63 in the differential amplifiercircuit 61 in the comparator 51, as in the fourth embodiment.

The transistor 151 of the fifth embodiment differs from the transistor141 of the fourth embodiment in that the gate of the transistor 151 isconnected to the connecting point to which the gate of the transistor 86as the current limiting unit 63 is also connected, and is controlled inthe same manner as the transistor 86. Consequently, not only the circuitstructure but also the operation of the transistor 151 can be the sameas the transistor 86.

<Comparator Off Control at a Time of Signal Reading>

The operation of the ADC 42 is divided into a signal write period duringwhich the reference signal REF is compared with the pixel signal SIG,and the data LATn at a time when the reference signal REF and the pixelsignal SIG become equal to each other is written into the latch storageunit 52 based on the code input signal BITXn, and a signal read periodduring which the data LATn stored in the latch storage unit 52 is outputas the latch signal Coln, as shown in FIG. 8.

After inversion of the output signal VCO, a current that is twice theinitial current IB flows in the comparator 51 as described above.However, this current is unnecessary during the signal read period.

When the signal write period ends and the signal read period starts, thevoltage of the reference signal REF to be supplied to the gate of thetransistor 81 of the comparator 51 can be controlled to drop to thelevel at which the transistor 81 is turned off (the level being thestandby voltage V_(stb) described later with reference to FIG. 19).Consequently, the current flowing in the left side of the differentialamplifier circuit 61 becomes zero, and the current flowing in the rightside that reflects the current in the left side also becomes zero. As aresult, any stationary current does not flow in the transistor 92 of thepositive feedback circuit 62. Thus, except for leakage, the currentconsumed during the signal read period can be made zero, and powerconsumption can be further reduced.

<Specific Example Structures of Pixel Units>

<8. First Embodiment of the Pixel Unit>

FIG. 18 is a circuit diagram showing a first embodiment of the pixel 21,in which the details of the pixel circuit 41 is added to the circuit ofthe ADC 42 according to the fifth embodiment shown in FIG. 16.

The circuit structure of the comparator 51 is the circuit structureshown in FIG. 16, but may be some other circuit structure.

The pixel circuit 41 includes a photodiode (PD) 171 as a photoelectricconversion unit, a discharge transistor 172, a transfer transistor 173,a reset transistor 174, and an FD (floating diffusion layer) 175.

The discharge transistor 172 is used when the exposure period isadjusted. Specifically, the discharge transistor 172 is turned on whenthe exposure period is to be started at a desired time. Consequently,the charge stored in the photodiode 171 so far is discharged. Therefore,the exposure period starts after the discharge transistor 172 is turnedoff.

The transfer transistor 173 transfers the charge generated at thephotodiode 171, to the FD 175. The reset transistor 174 resets thecharge held in the FD 175. The FD 175 is connected to the gate of thetransistor 82 of the differential amplifier circuit 61. With this, thetransistor 82 of the differential amplifier circuit 61 also functions asan amplification transistor of the pixel circuit 41.

The source of the reset transistor 174 is connected to the gate of thetransistor 82 of the differential amplifier circuit 61 and the FD 175,and the drain of the reset transistor 174 is connected to the drain ofthe transistor 82. In this structure, there is no fixed reset voltagefor resetting the charge in the FD 175. This is because a reset voltagefor resetting the FD 175 can be arbitrarily set with the referencesignal REF by controlling the circuit state of the differentialamplifier circuit 61.

<Pixel Unit Timing Chart>

Referring now to the timing chart in FIG. 19, the operation of the pixel21 shown in FIG. 18 is described.

First, at time t1, the reference signal REF is changed from a standbyvoltage V_(stb) to a reset voltage V_(rst) for resetting the charge inthe FD 175, and the reset transistor 174 is turned on, so that thecharge in the FD 175 is reset. At time t1, the initialization signal INIto be supplied to the gate of the transistor 93 of the positive feedbackcircuit 62 is set at Hi, so that the positive feedback circuit 62 is putinto an initial state.

At time t2, the reference signal REF is boosted to a predeterminedvoltage V_(u), and comparison between the reference signal REF and thepixel signal SIG is started. At this point of time, the reference signalREF is larger than the pixel signal SIG, and therefore, the outputsignal VCO is Hi.

At time t3 when the reference signal REF and the pixel signal SIG aredetermined to be equal, the output signal VCO is inverted (to Low). Asthe output signal VCO is inverted, the speed of inversion of the outputsignal VCO is increased by the positive feedback circuit 62, asdescribed above. The latch circuit 101′-n (n being 1 to N) of the latchstorage unit 52 stores the data LATn at the time when the output signalVCO is inverted.

At time t4 when the signal write period ends and the signal read periodstarts, the voltage of the reference signal REF to be supplied to thegate of the transistor 81 of the comparator 51 is lowered to the level(standby voltage V_(stb)) at which the transistor 81 is turned off. Withthis, the current to be consumed by the comparator 51 during the signalread period is reduced.

At time t5, the control signal WORD switches to Hi, and the latch signalColn of the nth bit (n being 1 to N) is output from the latch signaloutput line 114. The data obtained at this point is P-phase data at thereset level at the time of the correlated double sampling (CDS) process.

At time t6, the reference signal REF is boosted to the predeterminedvoltage V_(u), and the initialization signal INI to be supplied to thegate of the transistor 93 is set at Hi, so that the positive feedbackcircuit 62 is again put into the initial state.

At time t7, the transfer transistor 173 of the pixel circuit 41 isturned on, and the charge generated at the photodiode 171 is transferredto the FD 175.

After the initialization signal INI is returned to Low, comparisonbetween the reference signal REF and the pixel signal SIG is started. Atthis point of time, the reference signal REF is larger than the pixelsignal SIG, and therefore, the output signal VCO is Hi.

At time t8 when the reference signal REF and the pixel signal SIG aredetermined to be equal, the output signal VCO is inverted (to Low). Asthe output signal VCO is inverted, the speed of inversion of the outputsignal VCO is increased by the positive feedback circuit 62. The latchcircuit 101′-n (n being 1 to N) of the latch storage unit 52 stores thedata LATn at the time when the output signal VCO is inverted.

At time t9 when the signal write period ends and the signal read periodstarts, the voltage of the reference signal REF to be supplied to thegate of the transistor 81 of the comparator 51 is lowered to the level(standby voltage V_(stb)) at which the transistor 81 is turned off. Withthis, the current to be consumed by the comparator 51 during the signalread period is reduced.

At time t10, the control signal WORD switches to Hi, and the latchsignal Coln of the nth bit (n being 1 to N) is output from the latchsignal output line 114. The data obtained at this point is D-phase dataat the signal level at the time of the correlated double sampling (CDS)process. At time t11, the state is the same as the above described stateat time t1, and the next 1V (one vertical scan period) is driven.

In the above described driving of the pixel 21, P-phase data (at thereset level) is first obtained and read, and D-phase data (at the signallevel) is then obtained and read.

Through the above described operation, the respective pixels 21 of thepixel array unit 22 of the solid-state imaging device 1 are reset at thesame time, and a global shutter operation can be performed to expose allthe pixels at the same time. As all the pixels can be simultaneouslyexposed and read, there is no need to prepare the holding unit that isnormally provided in each pixel to hold charge until the charge is read.Also, in the structure of each pixel 21, there is no need to provide aselect transistor or the like that selects a pixel to output the pixelsignal SIG and is necessary in a solid-state imaging device of aparallel column reading type.

In the driving of the pixel 21 described above with reference to FIG.19, the discharge transistor 172 is controlled to be constantly off.However, at desired times, a discharge signal OFG may be set at Hi toturn on the discharge transistor 172. After that, the dischargetransistor 172 may be turned off, to set desired exposure periods, asindicated by dashed lines in FIG. 19.

<9. Second Embodiment of the Pixel Unit>

FIG. 20 is a circuit diagram showing a second embodiment of the pixel21.

In the second embodiment of the pixel 21, a PMOS transistor 181 isfurther provided between the transistors 91 and 92 in the positivefeedback circuit 62. The source of the PMOS transistor 181 is connectedto the drain of the transistor 91, and the drain of the PMOS transistor181 is connected to the drain of the transistor 92. The initializationsignal INI is input to the gate of the PMOS transistor 181.

In the circuit structure of the pixel 21 according to the firstembodiment shown in FIG. 18, at time t1, the voltage of the referencesignal REF is set at the reset voltage V_(rst), and the reset voltageV_(rst) is also input to the gain of the transistor 91 of the positivefeedback circuit 62 while the charge in the FD 175 of the pixel circuit41 is being reset. At this point of time, in the positive feedbackcircuit 62, a feedthrough current continues to flow from the powersupply voltage Vdd to GND. To avoid such a state in the pixel 21according to the second embodiment shown in FIG. 20, the PMOS transistor181 that is controlled by the initialization signal INI like thetransistor 93 is further provided between the transistors 91 and 92 inthe positive feedback circuit 62. With this structure, the PMOStransistor 181 is off while the transistor 93 remains on due to theinitialization signal INI at Hi. Thus, the current flowing from thetransistor 91 of the positive feedback circuit 62 to the transistor 93can be cut off. The driving of the pixel 21 according to the secondembodiment shown in FIG. 20 is the same as that shown in FIG. 19.

<10. Third Embodiment of the Pixel Unit>

FIG. 21 is a circuit diagram showing a third embodiment of the pixel 21.

The third embodiment of the pixel 21 shown in FIG. 21 is another examplecircuit structure that prevents a state where a feedthrough currentcontinues to flow in the positive feedback circuit 62 when the charge inthe FD 175 is being reset.

In the circuit of the pixel 21 according to the second embodiment shownin FIG. 20, the same initialization signal INI is input to thetransistor 93 and the PMOS transistor 181. Therefore, as soon as theinitialization signal INI switches to Low, the charge stored in thesource of the PMOS transistor 181 becomes an injection, and partiallypressurizes the node of the transistor 86 forming the current limitingunit 63. At this point of time, an incorrect operation might be causeddepending on the amount of the injection. To prevent the incorrectoperation, an initialization signal INI2 is input to the PMOS transistor181 independently of the initialization signal INI that is input to thetransistor 93 in the third embodiment.

FIG. 22 is a timing chart showing operation of the pixel 21 according tothe third embodiment.

As shown in FIG. 22, the initialization signal INI and theinitialization signal INI2 are switched to Hi at the same time, but areswitched to Low at different times from each other. Specifically,control is performed so that the initialization signal INI is switchedto Low after the initialization signal INI2 is switched to Low. Theother aspects of the operation are the same as those of the firstembodiment described above with reference to FIG. 19.

<11. Fourth Embodiment of the Pixel Unit>

FIG. 23 is a circuit diagram showing a fourth embodiment of the pixel21.

The fourth embodiment of the pixel 21 shown in FIG. 23 is yet anotherexample circuit structure that prevents a state where a feedthroughcurrent continues to flow in the positive feedback circuit 62 when thecharge in the FD 175 is being reset.

In the fourth embodiment, an NMOS transistor 182 is provided, instead ofthe PMOS transistor 181 according to the third embodiment shown in FIG.21. An initialization signal xINI2 that is an inverted signal of theinitialization signal INI2 input to the PMOS transistor 181 according tothe third embodiment is input to the gate of the NMOS transistor 182.

FIG. 24 is a timing chart showing operation of the pixel 21 according tothe fourth embodiment.

The pixel 21 according to the fourth embodiment is driven in the samemanner as the pixel 21 according to the third embodiment, except forbeing driven with the initialization signal xINI2, which is an invertedsignal of the initialization signal INI2.

Between the two circuit structures of the third embodiment and thefourth embodiment, a suitable one should be selected depending on layoutefficiency.

<12. First Embodiment of Pixel Sharing>

Although one ADC 42 is provided in one pixel 21 in the respectiveembodiments described so far, one ADC 42 may be shared among pixels 21.

FIG. 25 is a circuit diagram showing a first embodiment of pixelsharing.

In the first embodiment of pixel sharing shown in FIG. 25, a pixelcircuit 41-q (q being one of 1 to 4) provided in each pixel 21 includesa photodiode 171 q, a discharge transistor 172 q, and a transfertransistor 173 q, and the four pixel circuits 41-1 through 41-4 shareone reset transistor 174, one FD 175, and one ADC 42.

The circuit structure of the comparator 51 is the circuit structureshown in FIG. 23, but may be some other circuit structure.

FIG. 26 is a timing chart showing operation of a pixel 21 including apixel circuit 41-q (q being one of 1 to 4) in the case of the pixelsharing according to the first embodiment shown in FIG. 25.

The operation of the pixel 21 is the same as that shown in FIG. 24,except that the discharge signal OFG and a transfer signal TX are adischarge signal OFGq and a transfer signal TXq corresponding to thedischarge transistor 172 q and the transfer transistor 173 q in thepixel circuit 41-q.

<13. Second Embodiment of Pixel Sharing>

FIG. 27 is a circuit diagram showing a second embodiment of pixelsharing.

In the second embodiment of pixel sharing shown in FIG. 27, a pixelcircuit 41-q (q being one of 1 to 4) provided in each pixel 21 includesa photodiode 171 q, a discharge transistor 172 q, a transfer transistor173 q, a reset transistor 174 q, an FD 175 q, and a transistor 82 q ofthe differential amplifier circuit 61 that functions as an amplificationtransistor of the pixel circuit 41-q.

The four pixel circuits 41-1 through 41-4 share one ADC 42, except forthe transistor 82 q of the differential amplifier circuit 61.

In the second embodiment of pixel sharing, the circuit structure of thecomparator 51 is also the circuit structure shown in FIG. 23, but may besome other circuit structure.

FIG. 28 is a timing chart showing operation of a pixel 21 including apixel circuit 41-q in the case of the pixel sharing according to thesecond embodiment shown in FIG. 27.

In FIG. 28, the discharge signal OFG, the reset signal RST, and thetransfer signal TX are the discharge signal OFGq, the reset signal RSTq,and the transfer signal TXq corresponding to the pixel circuit 41-q.

Also, in FIG. 28, the control signal WORD switches to Hi at time t10. Attime t11 after the D-phase data in the pixel circuit 211-q is read, thevoltage of the reference signal REF is set at a voltage (a non-selectvoltage V_(nsel)) for making the pixel 21 including the pixel circuit41-q non-selected, and the reset signal RSTq of the reset transistor 174q is switched to Hi. With this, the FD 175 q is set at the non-selectvoltage V_(nsel).

The non-select voltage V_(nsel) corresponds to the off-state of theselect transistor, is a potential at which the pixel circuits 41-q notoutputting the pixel signal SIG are turned off, and is a voltage atwhich charge does not flow back to the photodiode 171 q via the transfertransistor 173 q.

The pixel circuit 41-q outputting the pixel signal SIG is selected bysetting the voltage of the reference signal REF at the reset voltageV_(rst) and the voltage of the FD 175 at the reset voltage V_(rst) attime t1.

That is, in the pixel sharing according to the second embodiment, one ofthe four pixel circuits 41 is selected by setting the reset voltageV_(rst) at time t1. After the pixel signal SIG is output, the voltage ofthe FD 175 is set at the non-select voltage V_(nsel) at time t11, sothat the selected pixel circuit 41 is made non-selected. Where the resetvoltage V_(rst) is 2 V, for example, the non-select voltage V_(nsel) maybe approximately 0.6 V.

As described above, in the circuit structure for the pixel sharingaccording to the second embodiment, the voltage of the FD 175 can bearbitrarily set with the reference signal REF. By taking advantage ofthis aspect, it is possible to select each pixel circuit 211, withoutany select transistor.

In the circuit structure for the pixel sharing according to the secondembodiment, the four pixels sharing the ADC 42 are called first throughfourth pixels, for example. In that case, the solid-state imaging device1 performs “P-phase data reading (P), charge transfer to the FD(transfer), and D-phase data reading (D)”=“P, transfer, D”. For thefirst through fourth pixels in this order, the solid-state imagingdevice 1 performs “P, transfer, D, P, transfer, D, P, transfer, D, P,transfer, D”.

<Pixel-Sharing Read Sequence>

In the pixel sharing according to the first or second embodiment, thepixel signals SIG of the four shared pixels (four pixels 21) are read ina predetermined sequence as described above. Depending on the readsequence, a color artifact might be caused.

FIG. 29 shows a pixel read sequence that might cause a color artifact ina case where each sharing unit is formed with four pixels, and colorfilters are arranged in a Bayer array. In FIG. 29, the numbers writtenin the pixels indicate the order of reading.

As shown in FIG. 29, in a case where the R pixel, the Gr pixel, the Gbpixel, and the B pixel are read in this order among the four pixels ofeach sharing unit, the exposure periods for the four pixels in eachsharing unit differ from one another. In a case where white flash lightenters the imaging area, the obtained pixel signals do not representwhite. Depending on the timing, the respective colors might beemphasized, or the complementary colors of the pixels not subjected toflash light might appear.

In view of this, the signals of the four pixels in each sharing unit areread in the read sequence shown in FIG. 30, so that color artifacts canbe prevented. In FIG. 30, among 16 pixels formed with four 2×2 sharingunits, the pixel signals SIG are read so that the combination of thecolors of the pixels to be simultaneously read represents white (or an Rpixel, a Gr pixel, a Gb pixel, and a B pixel). With this read sequence,even if white flash light enters the imaging area, the same amount ofsignals enter the pixels having the same exposure time, and thus, colorartifacts can be prevented.

Alternatively, while the read pixel control remains the same as thatshown in FIG. 29, the color array may be modified as shown in FIG. 31.In FIG. 31, the four pixels of a sharing unit are color filters of thesame color, and color filters are arranged so that 16 pixels formed withfour 2×2 sharing units form a Bayer array. The read sequence iscontrolled so that the pixels in the same positions in the respectivesharing units are read at the same time. In this case, among the 16pixels formed with the four 2×2 sharing units, the combination of thecolors of the pixels to be simultaneously read represents white. Even ifwhite flash light enters the imaging area, the same amount of signalsenter the pixels having the same exposure time, and thus, colorartifacts can be prevented.

In a structure in which the ADC 42 is shared among four pixels asdescribed above, if one captured image is formed by combining pixelsignals obtained through four separate read operations, the exposureperiods of the four pixels in each sharing unit differ from one another.If one captured image is formed only with pixels that are simultaneouslyread, a global shutter image that is ¼ in pixel number and ¼ in spatialresolution but is four times higher in speed is obtained. Alternatively,four global shutter images that are ¼ in pixel number, are ¼ in spatialresolution, and are in a one-pixel-shifted relationship are obtainedthrough four separate read operations.

<14. Third Embodiment of Pixel Sharing>

In the circuit structure for the pixel sharing according to the secondembodiment, reading is performed in the sequence of “P, transfer, D, P,transfer, D, P, transfer, D, P, transfer, D” for the first throughfourth pixels in this order. As a result, the exposure periods of thefour pixels in each sharing unit differ from one another, and a globalshutter operation cannot be realized.

In view of this, the circuit structure shown in FIG. 32 is designed sothat a global shutter operation can be performed while the ADC 42 isshared among four pixels.

FIG. 32 is a circuit diagram showing a third embodiment of pixelsharing.

The circuit structure for the pixel sharing according to the thirdembodiment shown in FIG. 32 differs from the circuit structure for thepixel sharing according to the second embodiment shown in FIG. 27, inthat the pixel circuit 41-q provided in each pixel 21 further includes aselect transistor 176 q in the third embodiment.

FIG. 33 is a timing chart showing operation of the four pixels sharingthe ADC 42 in the case of the pixel sharing according to the thirdembodiment shown in FIG. 32.

In the pixel sharing according to the third embodiment, the solid-stateimaging device 1 performs drive control in the sequence of “P, P, P, P,transfer, D, D, D, D”, as shown in FIG. 33. Specifically, after readingthe P-phase data of the first through fourth pixels in this order ineach sharing unit, the solid-state imaging device 1 collectivelytransfers the charge stored in all the pixels to the FD 175 q, and thenreads the D-phase data of the first through fourth pixels in this orderin each sharing unit.

The exposure time of each pixel 21 is determined by the falling of thetransfer signal TXq or the falling of the discharge signal OFGq, andthus, the same exposure time can be set for all the pixels. That is, aglobal shutter operation can be realized.

However, all the pixels are simultaneously subjected to exposure andtransfer. Therefore, the voltages of the FDs 175 q of all the sharedpixels become the reset voltage V_(rst), and it is not possible to setthe voltage of the FD 175 q of one of the shared pixels at thenon-select voltage V_(nsel) as in the second embodiment. To counterthis, the newly-added select transistor 176 q is used to limit signaloutputs from the comparator 51.

<15. Fourth Embodiment of Pixel Sharing>

FIG. 34 is a circuit diagram showing a fourth embodiment of pixelsharing.

The circuit structure for the pixel sharing according to the fourthembodiment shown in FIG. 34 differs from the circuit structure for thepixel sharing according to the third embodiment shown in FIG. 32, inthat a transistor 191 of the same type (NMOS) as the select transistor176 q is further provided in a position symmetrical to the selecttransistor 176 q, or between the drain of the transistor 141 and thedrain of the transistor 81 to which the reference signal REF is input,in the differential amplifier circuit 61. The gate of the transistor 191is connected to a predetermined voltage.

In the circuit structure for the pixel sharing according to the thirdembodiment shown in FIG. 32, the select transistor 176 q is added onlyto one side (right side) of the differential amplifier circuit 61, andtherefore, a difference in characteristics might be generated betweenthe right side and the left side. In view of this, the transistor 191 ofthe same type (NMOS) as the select transistor 176 q is provided as adummy transistor, so that generation of any difference incharacteristics can be prevented.

The method of driving the shared pixels according to the fourthembodiment is the same as the method according to the third embodimentdescribed above with reference to FIG. 33.

<Vertical Division Control>

In a circuit structure according to the present disclosure, an inputsignal (or the reference signal REF) of the transistor 81 controlled bythe reference signal REF in the differential amplifier circuit 61 ismade equal to or lower than the threshold voltage of the transistor 81so that the transistor 85 as the constant current source is turned offand does not operate.

In other words, the voltage of the reference signal REF is lowered toGND, for example, so that the pixel 21 can be put into a resting state.In this situation, the pixel array unit 22 is divided into apredetermined number of areas, as shown in FIG. 35, and the voltage ofthe reference signal REF is controlled in each of the areas so that thedriving area can be changed.

For example, the pixel array unit 22 is vertically divided into threepixel array units 22-H, 22-M, and 22-L, and, in the stage after the DAC24, output buffers 231-H, 231-M, and 231-L corresponding to the pixelarray units 22-H, 22-M, and 22-L are provided, as shown in FIG. 35.Outputs from the output buffers 231-H and 231-L are lowered to GND, forexample, so that the solid-state imaging device 1 puts the upper pixelarray unit 22-H and the lower pixel array unit 22-L into a restingstate, and drives only the pixel array unit 22-M in the middle. Withthis, only the necessary area can be driven, and power consumption canbe reduced.

Although the pixel array unit 22 is vertically divided into three in theexample shown in FIG. 35, the pixel array unit 22 is not necessarilydivided into three, but may be divided into two, or may be divided intofour or more. Also, the dividing direction may be the horizontaldirection. Output buffers 231 may be provided in the vertical direction,and the initialization signal INI is controlled to be constantly on inthe horizontal direction. In this manner, the pixel array unit may bedivided into tile-like areas, and desired areas may be put into aresting state.

<16. Structure with Multiple Substrates 1>

In the above description, the solid-state imaging device 1 is formed onthe single semiconductor substrate 11. However, the solid-state imagingdevice 1 may be formed by dividing circuits between semiconductorsubstrates 11.

FIG. 36 is a conceptual diagram of the solid-state imaging device 1formed by stacking the two semiconductor substrates 11 of an uppersubstrate 11A and a lower substrate 11C.

At least the pixel circuit 41 including the photodiode 171 is formed onthe upper substrate 11A. At least the latch storage unit 52 includingone or more latch circuits 101 is formed on the lower substrate 11C. Theupper substrate 11A and the lower substrate 11C are joined by a metalbond such as Cu—Cu.

<Example Structure with Two Substrates 1-1>

FIG. 37 shows a first example of a circuit structure formed on the uppersubstrate 11A and the lower substrate 11C.

The pixel circuit 41 and the circuit of the comparator 51 of the ADC 42are formed on the upper substrate 11A. The circuit of the latch storageunit 52 of the ADC 42 is formed on the lower substrate 11C.

The circuit structure in FIG. 37 is a circuit structure representing thesecond embodiment of the pixel 21 shown in FIG. 20, but may be a circuitstructure according to any other embodiment.

<Example Structure with Two Substrates 1-2>

FIG. 38 shows a second example of a circuit structure formed on theupper substrate 11A and the lower substrate 11C.

The pixel circuit 41 and the circuit of the transistor 82 of thedifferential amplifier circuit 61 of the ADC 42 are formed on the uppersubstrate 11A. The circuit of the ADC 42, except for the transistor 82,is formed on the lower substrate 11C.

To maximize the aperture ratio of the pixel 21, the upper substrate 11Ais made as similar as possible to the pixel circuit 41, as shown in FIG.38. If there is a parasitic capacitance, the conversion efficiency ofthe FD 175 becomes lower. To counter this, the transistor 82 of thedifferential amplifier circuit 61 as well as the pixel circuit 41 isformed on the upper substrate 11A, as shown in FIG. 38.

In view of this, the divided circuit structure shown in FIG. 38 has alayout that prioritizes the sensitivity of the light receiving unit(photodiode 171).

<Example Structure with Two Substrates 1-3>

FIG. 39 shows a third example of a circuit structure formed on the uppersubstrate 11A and the lower substrate 11C.

The pixel circuit 41 and the circuit of the transistors 81, 82, and 85of the differential amplifier circuit 61 of the ADC 42 are formed on theupper substrate 11A. The circuit of the ADC 42, except for thetransistors 81, 82, and 85, is formed on the lower substrate 11C.

In the second circuit structure shown in FIG. 38, only the transistor 82of the transistors 81 and 82 forming a differential pair in thedifferential amplifier circuit 61 is placed on the upper substrate 11A,and the transistor 81 is placed on the lower substrate 11C. As a result,a difference in characteristics might be caused. To avoid this in thethird circuit structure, the transistors 81 and 85 of the differentialamplifier circuit 61 are also formed on the upper substrate 11A.

In view of this, the divided circuit structure shown in FIG. 39 has alayout that minimizes the difference in characteristics.

<17. Structure with Multiple Substrates 2>

FIGS. 36 through 39 show examples in which the solid-state imagingdevice 1 is formed with two semiconductor substrates 11. However, thesolid-state imaging device 1 can also be formed with three semiconductorsubstrates 11.

FIG. 40 is a conceptual diagram of the solid-state imaging device 1formed by stacking the three semiconductor substrates 11 of an uppersubstrate 11A, an intermediate substrate 11B, and a lower substrate 11C.

At least the pixel circuit 41 including the photodiode 171 and part ofthe circuit of the comparator 51 are formed on the upper substrate 11A.At least the latch storage unit 52 including one or more latch circuits101 is formed on the lower substrate 11C. The remaining circuit of thecomparator 51 not placed on the upper substrate 11A is formed on theintermediate substrate 11B. The upper substrate 11A and the intermediatesubstrate 11B, and the intermediate substrate 11B and the lowersubstrate 11C are joined by metal bonds such as Cu—Cu.

FIG. 41 shows an example of a circuit layout on the respectivesemiconductor substrates 11 in a case where the solid-state imagingdevice 1 is formed with the three semiconductor substrates 11.

In the example shown in FIG. 41, the circuit placed on the uppersubstrate 11A is the circuit of the upper substrate 11A shown in FIG. 39that minimizes the difference in characteristics. The remaining circuitof the comparator 51 is placed on the intermediate substrate 11B, andthe latch storage unit 52 is placed on the lower substrate 11C.

FIG. 42 is a schematic cross-sectional view in a case where thesolid-state imaging device 1 is formed with the three semiconductorsubstrates 11.

The upper substrate 11A is of a back-illuminated type, having thephotodiode 171, a color filter 252, an on-chip lens (OCL) 253, and thelike formed on the back surface on the opposite side from the frontsurface on which an interconnect layer 251 is formed.

The interconnect layer 251 of the upper substrate 11A is joined to aninterconnect layer 261 on the front surface side of the intermediatesubstrate 11B by a Cu—Cu bond.

The intermediate substrate 11B and the lower substrate 11C are joined bya Cu—Cu bond between an interconnect layer 271 formed on the frontsurface side of the lower substrate 11C and a connecting line 263 of theintermediate substrate 11B. The connecting line 263 of the intermediatesubstrate 11B is connected to the interconnect layer 261 on the frontsurface side of the intermediate substrate 11B by a through electrode262.

In the example shown in FIG. 42, the interconnect layer 261 on the frontsurface side of the intermediate substrate 11B is joined to and facesthe interconnect layer 251 of the upper substrate 11A. However, theintermediate substrate 11B may be reversed so that the interconnectlayer 261 of the intermediate substrate 11B is joined to and faces theinterconnect layer 271 of the lower substrate 11C.

<18. Structure with Multiple Substrates 3>

FIG. 43 is another conceptual diagram of the solid-state imaging device1 formed with semiconductor substrates 11.

As shown in FIG. 43, the solid-state imaging device 1 is formed bybonding a semiconductor substrate 11-E (hereinafter referred to as theside substrate 11-E) to the sidewalls of semiconductor substrates 11-D₁through 11-D_(x) (hereinafter referred to as the stacked substrates11-D₁ through 11-D_(x), x>1).

FIG. 44 shows an example of a circuit layout on the respectivesemiconductor substrates 11 in a case where the solid-state imagingdevice 1 is formed as shown in FIG. 43.

As shown in FIG. 44, the pixel circuit 41 and the circuit of thetransistors 81, 82, and 85 of the differential amplifier circuit 61 ofthe ADC 42 are formed on the side substrate 11-E.

The circuit of the ADC 42, except for the transistors 81, 82, and 85, isappropriately divided among the stacked substrates 11-D₁ through11-D_(x).

In the substrate structure shown in FIG. 43, the light receiving unit(photodiode 171) is formed on the side substrate 11-E, and accordingly,the area restriction that limits the circuit area to approximately thesame as the area (region) of the pixel 21 is eliminated from the stackedsubstrates 11-D₁ through 11-D_(x). Thus, instead of the latch circuits101, a count-up/down counter circuit that is capable of a CDS process,and a signal processor circuit for improving characteristics, such as acorrection processor circuit, can be formed on the stacked substrates11-D₁ through 11-D_(x).

The stacked substrates 11-D₁ through 11-D_(x) are manufactured assubstrates having the same characteristics through the same process.When the stacked substrates 11-D₁ through 11-D_(x) are stacked, IDs foridentification are assigned to the respective stacked substrates 11-D.For example, predetermined IDs are written into nonvolatile memoriesformed in the stacked substrates 11-D during the process of testassembling, so that the IDs for identifying the respective stackedsubstrates 11-D are assigned. When the solid-state imaging device 1 isdriven and controlled, control is performed by referring to the IDsassigned to the respective stacked substrates 11-D, so that collision ofcontrol is avoided.

FIG. 45 is a cross-sectional view of the joint surfaces of the stackedsubstrates 11-D₁ through 11-D_(x) and the side substrate 11-E.

The pixel signals SIG generated at the photodiodes 171 of the respectivepixels 21 of the side substrate 11-E are drawn to connecting units 291gathered in a predetermined region on the joint surface of the sidesubstrate 11-E by interconnecting lines 292.

On the joint surfaces of the stacked substrates 11-D₁ through 11-D_(x),connecting units 301 are also formed in the positions corresponding tothe respective connecting units 291 on the joint surface of the sidesubstrate 11-E.

The connecting units 291 of the side substrate 11-E and the connectingunits 301 of the stacked substrates 11-D₁ through 11-D, in thecorresponding positions are connected by Cu—Cu bonds, for example.

As for the shapes of the connecting units 291 and the connecting units301, the connecting units 291 or the connecting units 301 are verticallylong, and the others are horizontally long, so as to allow some marginfor error.

As described above with reference to FIGS. 36 through 45, thesolid-state imaging device 1 is formed by stacking semiconductorsubstrates 11. With this, the area occupied in the horizontal directioncan be moved in the vertical direction, and the degree of freedom ininterconnecting becomes higher. In the semiconductor substrate 11 onwhich the photodiodes 171 are placed, a large light receiving area canbe secured in each photodiode 171, and accordingly, photosensitivity canbe increased.

<19. Fifth Embodiment of the Pixel Unit>

<Simultaneously Output of P-Phase Data and D-Phase Data>

FIG. 46 is a circuit diagram showing a fifth embodiment of the pixel 21.

In each of the above described embodiments, P-phase data and D-phasedata are output in order. However, the pixel 21 according to the fifthembodiment shown in FIG. 46 is designed to simultaneously output P-phasedata and D-phase data.

The differences between the structure of the pixel 21 according to thefifth embodiment shown in FIG. 46 and the structure of the pixel 21according to the second embodiment shown in FIG. 20 are now described.

In the comparator 51 shown in FIG. 46, a multiplexer 321 is provided inthe stage after the positive feedback circuit 62, and the multiplexer321 includes an inverter 121P for P-phase data and an inverter 121D forD-phase data. Here, a control signal ENP is supplied to the source ofthe PMOS transistor 132 of the inverter 121P for P-phase data, and acontrol signal END is supplied to the source of the PMOS transistor 132of the inverter 121D for D-phase data.

The latch storage unit 52 also includes a P-phase latch unit 322P forP-phase data and a D-phase latch unit 322D for D-phase data. Both theP-phase latch unit 322P for P-phase data and the D-phase latch unit 322Dfor D-phase data are formed with latch circuits 101′-1 through 101′-N.

The inverter 121P for P-phase data outputs an output signal VCOP forP-phase data to the P-phase latch unit 322P, and the latch circuit 101-nof the P-phase latch unit 322P outputs a latch signal PColn based on acode input signal PBITXn that is input thereto.

The inverter 121D for D-phase data outputs an output signal VCOD forD-phase data to the D-phase latch unit 322D, and the latch circuit 101-nof the D-phase latch unit 322D outputs a latch signal DColn based on acode input signal DBITXn that is input thereto.

P-phase data and D-phase data can be simultaneously output with anystructure in which the P-phase latch unit 322P for P-phase data and theD-phase latch unit 322D for D-phase data are prepared, and themultiplexer 321 is provided as the input for the latch units, asdescribed above. To increase area efficiency, the voltages to besupplied to the sources of the inverter 121P for P-phase data and theinverter 121D for D-phase data are preferably controlled as describedabove.

In a case where P-phase data and D-phase data can be simultaneouslyoutput, the memory for storing P-phase data is unnecessary in thecircuit in the later stage as the output destination.

<Pixel Unit Timing Chart>

Referring now to the timing chart in FIG. 47, operation of the pixel 21that simultaneously outputs P-phase data and D-phase data as shown inFIG. 46 is described.

First, at time t21, the reference signal REF is set the reset voltageV_(rst) for resetting the charge in the FD 175, and the reset transistor174 is turned on, so that the charge in the FD 175 is reset. At timet21, the initialization signal INI to be supplied to the gate of thetransistor 93 of the positive feedback circuit 62 is set at Hi, so thatthe positive feedback circuit 62 is put into the initial state.

At time t22, the reference signal REF is boosted to a predeterminedvoltage V_(u). Also, the control signal ENP to be supplied to the sourceof the PMOS transistor 132 of the inverter 121P for P-phase data isswitched to Hi, and the inverter 121P for P-phase data outputs theoutput signal VCOP in accordance with the result of comparison betweenthe reference signal REF and the pixel signal SIG. At this point oftime, the reference signal REF is larger than the pixel signal SIG, andtherefore, the output signal VCOP is Hi.

At time t23 when the reference signal REF and the pixel signal SIG aredetermined to be equal, the output signal VCOP is inverted (to Low). Asthe output signal VCOP is inverted, the speed of inversion of the outputsignal VCOP is increased by the positive feedback circuit 62. The latchcircuit 101′-n (n being 1 to N) of the P-phase latch unit 322P forP-phase data stores the data PLATn at the time when the output signalVCO is inverted. That is, the latch circuits 101′ of all the pixels inthe pixel array unit 22 store the data PLATn.

At time t24, the control signal ENP to be supplied to the source of thePMOS transistor 132 of the inverter 121P for P-phase data is switched toLow, and the output of the inverter 121P for P-phase data is turned off.

At time t25, the reference signal REF is again boosted to thepredetermined voltage Va. Also, the control signal END to be supplied tothe source of the PMOS transistor 132 of the inverter 121D for D-phasedata is switched to Hi, and the inverter 121D for D-phase data outputsthe output signal VCOD in accordance with the result of comparisonbetween the reference signal REF and the pixel signal SIG. At this pointof time, the reference signal REF is larger than the pixel signal SIG,and therefore, the output signal VCOD is Hi.

At time t25, the initialization signal INI to be supplied to the gate ofthe transistor 93 of the positive feedback circuit 62 is set at Hi, sothat the positive feedback circuit 62 is put back into the initialstate.

At time t26, the transfer transistor 173 of the pixel circuit 41 isturned on, and the charge generated at the photodiode 171 is transferredto the FD 175.

At time t27 when the reference signal REF and the pixel signal SIG aredetermined to be equal, the output signal VCOD is inverted (to Low). Asthe output signal VCOD is inverted, the speed of inversion of the outputsignal VCOD is increased by the positive feedback circuit 62. The latchcircuit 101′-n (n being 1 to N) of the D-phase latch unit 322D forD-phase data stores the data DLATn at the time when the output signalVCO is inverted. That is, the latch circuits 101′ of all the pixels inthe pixel array unit 22 store the data DLATn.

At time t28, the control signal END to be supplied to the source of thePMOS transistor 132 of the inverter 121D for D-phase data is switched toLow, and the output of the inverter 121D for D-phase data is turned off.

At time t28, the signal write period ends, and the signal read periodthen starts. Therefore, at time t28, the voltage of the reference signalREF to be supplied to the gate of the transistor 81 of the comparator 51is lowered to the level (standby voltage V_(stb)) at which thetransistor 81 is turned off. With this, the current to be consumed bythe comparator 51 during the signal read period is reduced.

At time t29, the control signal WORD is switched to Hi, the data PLATnheld in the P-phase latch unit 322P for P-phase data is output as thelatch signal PColn (n being 1 to N), and the data DLATn held in theD-phase latch unit 322D for D-phase data is output as the latch signalDColn (n being 1 to N). That is, P-phase data and D-phase data aresimultaneously output.

Through this operation, not only are the effects of the solid-stateimaging device 1 according to each of the above described embodimentsachieved, but P-phase data and D-phase data can also be simultaneouslyoutput.

<Example Structure in Which Pixel Sensitivity Is Variable>

The area of a pixel 21 according to the present disclosure is determinedby the comparator 51 provided in the pixel 21, and therefore, the areaof the pixel 21 might become larger than that in a conventional CMOSimage sensor in which any comparator 51 is not provided. In a case wherethe area of each pixel 21 is large, and the quantity of signal charge islarge, the conversion efficiency of each pixel 21 needs to be lowered.If the conversion efficiency is made too low, the sensitivity in a lowilluminance condition becomes poorer, and the S/N becomes lower.

To counter this, a structure capable of adjusting the capacitance of theFD 175 may be employed so that the conversion efficiency of each pixel21 can be changed as necessary.

FIG. 48 is a circuit diagram showing a first example structure of thepixel circuit 41 that enables the capacitance of the FD 175 to vary.

In FIG. 48, an NMOS transistor 341 is further provided between thetransfer transistor 173 and the FD 175. The gate of the NMOS transistor341 is connected to the drain of the transfer transistor 173 and one endof the FD 175, and a control signal CTR is supplied to the source andthe drain of the NMOS transistor 341.

FIG. 49 is a circuit diagram showing a second example structure of thepixel circuit 41 that enables the capacitance of the FD 175 to vary.

In FIG. 49, an NMOS transistor 342 and a capacitor 343 are furtherprovided between the transfer transistor 173 and the FD 175. One end ofthe capacitor 343 is connected to GND, and the other end is connected tothe source of the NMOS transistor 342. The drain of the NMOS transistor342 is connected to the drain of the transfer transistor 173 and one endof the FD 175, and a control signal CTR is supplied to the gate of theNMOS transistor 342.

In either of the structures shown in FIGS. 48 and 49, the capacitance ofthe FD 175 can be made to vary in accordance with the voltage (Hi orLow) of the control signal CTR, and saturation in a high illuminancecondition can be prevented.

<Slope Inclination Change Control on the Reference Signal REF>

With the structure of a pixel 21 according to the present disclosure,the solid-state imaging device 1 reads P-phase data and D-phase dataindividually, and accordingly, can obtain individual digital data priorto the CDS process.

The DAC 24 of the solid-state imaging device 1 can change the slopeinclination (voltage change rate) of the reference signal REF at leastonce in 1 V, as shown in FIG. 50.

The upper half of FIG. 50 shows an example case where the slopeinclination of the reference signal REF is not changed, and the lowerhalf of FIG. 50 shows an example case where the slope inclination of thereference signal REF is changed four times in a D-phase data acquisitionperiod. As is apparent from FIG. 50, in the case where the slopeinclination of the reference signal REF is changed, the time of 1 V isshortened, and the speed of the AD conversion process can be increasedaccordingly.

A high-illuminance signal is inherently affected by shot noise, and, byvirtue of gamma processing in a later stage, low resolution does notstand out. In view of this, influence of changes in the slopeinclination is small. If the slope inclination is changed in a casewhere P-phase data and D-phase data are not read separately from eachother, the code at the connecting point of the slope is affected by theP-phase inversion distribution, and becomes unclear. As a result, theconnecting point cannot be extracted. In a case where P-phase data andD-phase data are read separately from each other, on the other hand, theconnecting point at a time when the slope inclination of the referencesignal REF is changed is apparent from acquired data, and thus, signalrestoration can be performed in a later stage.

<Frequency Change Control on the Code Input Signal BITXn>

For the same reason as the reason that the slope inclination of thereference signal REF can be changed, the frequency of the code inputsignal BITXn can be changed at least once in 1 V.

The upper half of FIG. 51 shows an example case where the frequency ofthe code input signal BITXn is not changed, and the lower half of FIG.51 shows an example case where the frequency of the code input signalBITXn is changed four times in a D-phase data acquisition period.

Although there is no effect to shorten the AD conversion process time asin the case where the slope inclination of the reference signal REF ischanged, the number of counter bits can be reduced (high-order bits maynot be held) by changing the frequency of the code input signal BITXn.Consequently, the circuit mounting area of the counter can be increased.Also, there is the effect to reduce electric power, as the number ofclock transitions is reduced.

<Addition of Decoupling Capacitance>

With the structure of a pixel 21 according to the present disclosure,all the circuits operate substantially at the same time, and therefore,an instantaneous current might be generated due to the circuitoperations.

To counter this, a capacitor 361 for restraining instantaneous currentsmay be provided as shown in FIG. 52.

The capacitor 361 is provided between GND and the power supply voltageVdd of the inverter 121 and the positive feedback circuit 62 thatgenerates a large instantaneous current. Due to the restrictions on thearea and the process at the time of formation, the capacitor 361 may bea MOS capacitor formed with a transistor, for example, but is notlimited to that.

One single capacitor 361 may be shared between the positive feedbackcircuit 62 and the inverter 121, or one capacitor 361 may be providedfor each of the positive feedback circuit 62 and the inverter 121. Ifthe restriction on area is strict, one capacitor 361 may be sharedbetween two comparators 51.

<Bit Number Slope Input>

In each of the above described embodiments, the latch storage unit 52 ofthe ADC 42 includes N memories (the latch circuits 101-1 through 101-N)corresponding to the number of bits, and one slope signal (the referencesignal REF) is input to the N memories in parallel.

However, the ADC 42 according to the present disclosure can input theslope signal (reference signal REF) the same number of times as thenumber of bits (N times), as disclosed in Non-Patent Document 1. In thiscase, the latch storage unit 52 of the ADC 42 includes only one (1-bit)latch circuit 101.

FIG. 53 is a timing chart schematically showing the drive control (therelationship between the slope signal and reading of 1-bit data) in acase where the slope signal is input N times in accordance with the Nbits.

FIG. 54 is a diagram showing the details of the timing chart shown inFIG. 53.

In the example shown in FIG. 53, the duration of a D-phase data periodis set at L*T, which is L times longer than the duration T of a P-phasedata period, and the dynamic range is made L times wider with theexposure ratio.

In the operation to input the slope signal the same number of times (Ntimes) as the number of bits as described above, power consumption canbe reduced while the determination speed of the comparator 51 isincreased, by virtue of the structure of the comparator 51 according tothe present disclosure.

<20. Sixth Embodiment of the Pixel Unit>

<Where Code Input Signals are Differential Signals>

FIG. 55 is a circuit diagram showing a sixth embodiment of the pixel 21.

The differences between the structure of the pixel 21 according to thesixth embodiment shown in FIG. 55 and the structure of the pixel 21according to the second embodiment shown in FIG. 20 are now described.

In the pixel 21 according to the sixth embodiment, the latch storageunit 52 includes two latch units 381 and 381X. Each of the latch units381 and 381X includes the latch circuits 101′-1 through 101′-N thatstore N-bit data. However, the code input signal BITXn to be input tothe latch unit 381 and the code input signal XBITXn to be input to thelatch unit 381X are differential signals, and the latch signal Coln tobe output from the latch unit 381 and the latch signal XColn to beoutput from the latch unit 381X are also differential signals.

In a case where the number of pixels in the pixel array unit 22 islarge, the interconnect lengths of the write circuit and the readcircuit are long, and it is difficult to accurate write and read data,due to noise.

To counter this in the pixel 21 according to the sixth embodiment, thelatch storage unit 52 includes two N-bit memories that are the latchunits 381 and 381X as shown in FIG. 55, and input/output signals aredifferential signals. Specifically, the latch storage unit 52 isdesigned so that one of the input/output signals of the latch units 381and 381X is Hi when the other one of the input/output signals is Low.With this, high resistance to common mode noise in the lines for bothsignals is achieved. Also, in the write circuit and the read circuit,signals invariably act on one another in a complementary manner, andthus, power consumption can be maintained at a constant level.

<Measures Against Light Leakage>

When strong light impinges on the photodiode 171, the charge leaks intothe FD 175 via the transfer gate 173. In a case where the FD 175 doesnot adequately block light, charge might be generated through thephotoelectric conversion at the FD 175. In such a situation, the pixelsignal SIG drops as indicated by the dashed line in FIG. 56, due to thecharge that has been generated at the FD 175 prior to transfer and isnot the pixel signal SIG generated from originally-received light. InFIG. 56, the dot-and-dash line indicates the normal pixel signal SIGprior to transfer.

As the pixel signal SIG drops due to the charge generated at the FD 175prior to transfer, the reference signal REF and the pixel signal SIG donot intersect with each other during the P-phase data period, as can beseen from comparison with the reference signal REF shown in FIG. 56. Insuch a case, correct AD conversion cannot be performed.

To counter this, the solid-state imaging device 1 sets the last codeinput signal BITXn in the P-phase data period at a predetermined codevalue HL_CODE indicating light leakage.

As described above with reference to FIG. 19 and others, after a signalwrite period ends, the voltage of the reference signal REF is lowered tothe standby voltage V_(stb) at which the transistor 81 is turned off, toreduce current consumption. Consequently, the output signal VCO isinverted outside the slope periods, and, in a stage after the ADC 42,the predetermined code value HL_CODE can be obtained. As a result, thecircuit that has obtained the predetermined code value HL_CODE detectsthe above described situation where strong light has entered, and aprocess to replace the value with the maximum luminance value can beperformed, for example.

The predetermined code value HL_CODE indicating light leakage is morepreferably a code that appears when light also impinges on the latchcircuit 101 of the latch storage unit 52. In a case where the latchcircuit 101 is formed with an NMOS transistor like the latch circuit 101according to the present disclosure, for example, charge is generatedwhen light impinges on the floating diffusion layer, resulting in 0 V.In view of this, the code value HL_CODE may be a voltage that invariablybecomes “0”.

<Structure Having Delay in the Pixel Array Unit>

By a method according to the present disclosure, light reception and ADconversion are performed concurrently in all the pixels, and therefore,instantaneous current or instantaneous noise might be generated.

To counter this in a circuit that can cancel error components through aCDS process or the like, or a circuit that does not need to performconcurrent operations, the times for the inverting operations may bepurposely shifted from one another.

For example, as shown in FIG. 57, the pixel array unit 22 may behorizontally divided into three pixel array units 22-A, 22-B, and 22-C,and the operation to be performed at the latch storage unit 52 of eachpixel 21 in the pixel array unit 22 to obtain P-phase data and theD-phase data may be performed at different times among the three regionsof the pixel array units 22-A, 22-B, and 22-C.

In this case, delay circuits 392 and 393 are provided, as well as acounter 391 that outputs the code input signal BITXn to the latchstorage unit 52 of each pixel 21 in the pixel array unit 22.

The code input signal BITXn output from the counter 391 is inputdirectly to the latch storage unit 52 of each of the pixels 21 belongingto the pixel array unit 22-A. The code input signal BITXn is delayed acertain amount of time from the pixel array unit 22-A by the delaycircuit 392, and is then input to the latch storage unit 52 of each ofthe pixels 21 belonging to the pixel array unit 22-B. The code inputsignal BITXn is further delayed a certain amount of time from the pixelarray unit 22-B by the delay circuit 393, and is then input to the latchstorage unit 52 of each of the pixels 21 belonging to the pixel arrayunit 22-C. Those shift components are equal in quantity to P-phase dataand D-phase data, and thus, can be cancelled by a CDS process. Theamount of delay is limited within such a range that the bit transitionorder of the code input signal BITXn is not changed.

<21. Example Structure of a Column ADC>

Although the ADC 42 is provided in each pixel 21 in the embodimentsdescribed so far, an ADC including the comparator 51 according to thepresent disclosure may be provided for each pixel column, and thesolid-state imaging device 1 may be of a parallel column reading type.

FIG. 58 is a diagram showing a circuit structure that has an ADCincluding the comparator 51 of the present disclosure for each pixelcolumn.

In the case where ADCs are provided for the respective pixel columns,each pixel 21 includes the photodiode 171, the transfer transistor 173,the reset transistor 174, the FD 175, an amplification transistor 411,and a select transistor 412. The amplification transistor 411 forms aload MOS 440 as a constant current source and a source follower circuit.Although the discharge transistor 172 is not included in the structure,the discharge transistor 172 may of course be employed.

A column ADC 431 provided for the corresponding pixel column in thepixel array unit 22 includes the comparator 51 of the present disclosureand a count-up/down (U/D) counter 441. In the case where ADCs areprovided for the respective pixel columns, the device formation area islarger than that in a case where ADCs are provided for the respectivepixels, and accordingly, the latch storage unit 52 can be replaced withthe U/D counter 441. Thus, a digital CDS process can be performed.

A capacitor 442 for cutting down DC components, and an NMOS transistor443 for initializing the floating diffusion layer are further providedat the input end to which the pixel signal SIG of the column ADC 431 isinput.

With the characteristics difference between the right side and the leftside in the differential amplifier circuit 61 being taken intoconsideration as in the other examples described above, a capacitor 444and an NMOS transistor 445 may be added to the left side in thedifferential amplifier circuit 61, as shown in FIG. 59.

Referring now to the timing chart in FIG. 60, operation of thesolid-state imaging device 1 of the parallel column reading type shownin FIG. 58 is described.

First, at time t41, the select signal SEL to be supplied to the selecttransistor 412 of the pixel 21 is switched to Hi, the pixel 21 isselected, and the reset transistor 174 is turned on. Consequently, thecharge in the FD 175 is reset. Also, at time t41, the initializationsignal INI to be supplied to the gate of the transistor 93 of thepositive feedback circuit 62 is set at Hi, the positive feedback circuit62 is put into the initial state, and a control signal AZ to be input tothe gate of the NMOS transistor 443 is set at Hi, to initialize the gate(floating portion) of the transistor 82 to which the pixel signal SIG isinput.

At time t42, the reference signal REF is boosted to a predeterminedvoltage V_(u), and comparison between the reference signal REF and thepixel signal SIG is started. At this point of time, the reference signalREF is larger than the pixel signal SIG, and therefore, the outputsignal VCO is Hi. After the reference signal REF turns into a slopesignal, the U/D counter 441 counts down while the output signal VCO isHi.

At time t43 when the reference signal REF and the pixel signal SIG aredetermined to be equal, the output signal VCO is inverted (to Low). Asthe output signal VCO is inverted, the speed of inversion of the outputsignal VCO is increased by the positive feedback circuit 62. The U/Dcounter 441 stops the counting down, and holds the count value at thispoint of time.

At time t44, the reference signal REF is boosted to a predeterminedvoltage V_(u). As a result, the reference signal REF becomes larger thanthe pixel signal SIG, and therefore, the output signal VCO is switchedto Hi. Also, the initialization signal INI to be supplied to the gate ofthe transistor 93 of the positive feedback circuit 62 is set at Hi, sothat the positive feedback circuit 62 is put back into the initialstate.

At time t45, the transfer transistor 173 of the pixel 21 is turned on,and the charge generated at the photodiode 171 is transferred to the FD175.

After the reference signal REF turns into a slope signal, the U/Dcounter 441 counts up while the output signal VCO is Hi. At time t46when the reference signal REF and the pixel signal SIG are determined tobe equal, the output signal VCO is inverted (to Low). As the outputsignal VCO is inverted, the speed of inversion of the output signal VCOis increased by the positive feedback circuit 62. The U/D counter 441then stops the counting up, and holds the count value CDS_data subjectedto a CDS process.

At time t47, the select signal SEL to be supplied to the selecttransistor 412 of the pixel 21 is switched to Low, and the pixel 21becomes non-selected. Also, the voltage of the reference signal REF tobe supplied to the gate of the transistor 81 of the comparator 51 islowered to the level (standby voltage V_(stb)) at which the transistor81 is turned off. With this, the current to be consumed by thecomparator 51 of the non-selected pixel 21 is reduced.

<22. Streaking Correction Calculation>

In a circuit structure according to the present disclosure, all thepixels (in a case where each pixel includes the ADC 42) or the pixelcolumns (in the case with the column ADCs 431) in the pixel array unit22 operate in parallel, and therefore, the reference black level mightvary when the circuits are collectively inverted. In other words, thereference black level might differ between a case where all the pixelsoutput black signals and a case where bright signals are output at acertain rate. This phenomenon is known as “streaking” in the field ofimage sensors of rolling-shutter types.

In the description below, a method of correcting variation (streaking)in the reference black level at the output unit 27 of the solid-stateimaging device 1 is described.

As shown in FIG. 61, black output pixels 21B that output black levelsare provided in the valid pixel region of the pixel array unit 22. Theblack output pixels 21B need to be provided in at least three positionsin the same row or the same column. For example, the black output pixels21B are arranged in nine (3×3) positions in the valid pixel region ofthe pixel array unit 22.

In a case where the reference black level is corrected in the horizontaldirection (x-direction) of the pixel array unit 22, the black levelerror ERROR can be expressed by the equation (1) shown below. However,due to the trade-off between a reduction in the amount of calculationand effects, the third-degree and higher terms are ignored, and theequation (2) is considered. In the equations (1) and (2), x represents apixel position in the horizontal direction.

[Mathematical Formula 1]

ERROR=α₀+α₁ x+α ₂ x ²+α₃ x ³+α₄ x ⁴+ . . .   (1)

[Mathematical Formula 2]

ERROR=α₀+α₁ x+α ₂ x ²  (2)

As shown in FIG. 62, the output value Y(0) of a black output pixel 21Bis obtained in a position where x=0, the output value Y(H/2) of a blackoutput pixel 21B is obtained in a position where x=H/2, and the outputvalue Y(H) of a black output pixel 21B is obtained in a position wherex=H.

In this case, coefficients α₀ and α₁ are the intercept and theinclination of the equation (2), and therefore, are obtained accordingto the following mathematical formula:

$\begin{matrix}{{\alpha_{0} = {Y(0)}}{\alpha_{1} = \frac{{Y(H)} - {Y(0)}}{H}}} & \left\lbrack {{Mathematical}\mspace{14mu} {Formula}\mspace{14mu} 3} \right\rbrack\end{matrix}$

When the output value Y(H/2) in the position where x=H/2 and the abovecoefficients α₀ and α₁ are plugged into the equation (2), the followingmathematical formula is obtained:

$\begin{matrix}\begin{matrix}{{Y\left( \frac{H}{2} \right)} = {\alpha_{0} + {\alpha_{1}\frac{H}{2}} + {\alpha_{2}\left( \frac{H}{2} \right)}^{2}}} \\{= {{Y(0)} + {\frac{{Y(H)} - {Y(0)}}{H} \cdot}}} \\{{\left( \frac{H}{2} \right) + {\alpha_{2}\left( \frac{H}{2} \right)}^{2}}}\end{matrix} & \left\lbrack {{Mathematical}\mspace{14mu} {Formula}\mspace{14mu} 4} \right\rbrack\end{matrix}$

When the mathematical formula is transformed into an equation todetermine the coefficient α₂, the coefficient α₂ is expressed asfollows:

$\begin{matrix}{\alpha_{2} = {\left\lbrack {{Y\left( \frac{H}{2} \right)} - {Y(0)} - {\frac{{Y(H)} - {Y(0)}}{H} \cdot \left( \frac{H}{2} \right)}} \right\rbrack \frac{4}{H^{2}}}} & \left\lbrack {{Mathematical}\mspace{14mu} {Formula}\mspace{14mu} 5} \right\rbrack\end{matrix}$

The dominant terms are extracted from the equation to determine thecoefficient α₂, and are simplified, to obtain the following equation:

$\begin{matrix}{\alpha_{2} = {\frac{4}{H^{2}}\left\lbrack {{Y\left( \frac{H}{2} \right)} - {Y(0)}} \right\rbrack}} & \left\lbrack {{Mathematical}\mspace{14mu} {Formula}\mspace{14mu} 6} \right\rbrack\end{matrix}$

According to the equation to determine the coefficient α₂, thecalculation of the coefficient α₂ can be made simpler if the correctionposition H is moved to a position represented by a power of 2.

Using the coefficients α₀, α₁, and α₂ determined in the above manner,the output unit 27 of the solid-state imaging device 1 calculates theblack level errors ERROR in accordance with the respective x-positions.The output unit 27 then subtracts the black level error values from thedigital pixel values of the respective pixels, to output signals withreduced reference black level variation.

In the above described example of calculation, the correcting arithmeticequations correspond to the positions in the horizontal direction, butcalculation can also be performed as to positions in the verticaldirection.

It is known that variation in the reference black level depends on thepower supply for the ADC or GND, and therefore, black output pixels 21Barranged in a direction parallel to the power supply line or the GNDline can be used in calculation.

Although the third- and higher-degree terms are ignored in the aboveexample, correction accuracy can be increased by using the third- andhigher-degree coefficients α₃, α₄, . . . .

As shown in FIG. 63, correction accuracy can also be improved byincreasing the number of black output pixels 21B arranged in the pixelarray unit 22.

The black output pixels 21B that output black levels may be pixels thatare designed for correction and have the upper surfaces of the lightreceiving units (photodiodes 171) covered with light blocking film, ormay be regular pixels like the other pixels 21 that output signalswithout any charge transfer with a control signal TX in the pixels 21.Alternatively, in a case where phase difference detection pixels thathave the light receiving units partially shielded from light arearranged in the pixel array unit 22, the phase difference detectionpixels may be driven without charge transfer, and be used as the blackoutput pixels 21B.

In a case where pixels 21 or phase difference detection pixels that arenot physically shielded from light by light blocking film are used asthe black output pixels 21B without charge transfer, two TX signalcontrol lines need to be provided in the solid-state imaging device 1that drives pixels row by row so that pixels 21 that perform chargetransfer and pixels 21 (black output pixels 21B) that do not performcharge transfer coexist in each pixel row as shown in FIG. 63.

In view of this, pixel rows that do not perform charge transfer may bearbitrarily set without the two TX signal control lines, as shown inFIG. 64, and black output pixels 21B may be set row by row. Correctionof the reference black level may be performed in the horizontaldirection with the black output pixels 21B in the same row, or may beperformed in the vertical direction with the black output pixels 21B inthe same column in the pixel array unit 22.

In a case where charge transfer is not performed, the dark currentcomponents of the black output pixels 21B are not output. However, thedark current components can be corrected by providing light blockingpixels that detect black levels outside the valid pixel region, anddetecting the dark current components from the light blocking pixels.

In calculating correction of the reference black level, output signalsare obtained from the black output pixels 21B more than once so as tolower the noise level, and signals from which high-frequency componentshave been removed with the mean value or the moving average of theoutput signals may be used.

<23. Seventh Embodiment of the Pixel Unit>

<Streaking Prevention Circuit>

FIG. 65 is a circuit diagram showing a seventh embodiment of the pixel21.

The seventh embodiment of the pixel 21 shown in FIG. 65 represents anexample structure in which correction of variation in the referenceblack level due to collective inversion in the circuits is realized notby calculation but by a circuit.

The differences between the structure of the pixel 21 according to theseventh embodiment shown in FIG. 65 and the structure of the pixel 21according to the second embodiment shown in FIG. 20 are now described.

In the second embodiment shown in FIG. 20, the drain of the resettransistor 174 of the pixel circuit 41 is connected to the drain of thetransistor 82 to which the pixel signal SIG is input. In the seventhembodiment shown in FIG. 65, however, the drain of the reset transistor174 of the pixel circuit 41 is connected to the power supply voltageVdd.

In this structure, variation in the threshold of the transistor 82 towhich the pixel signal SIG is input and variation in the threshold ofthe reset transistor 174 directly affect the floating diffusion layer.As a result, the collective inversion is scattered by the variation, andgeneration of streaking can be prevented. In an example interconnectlayout, the source of the reset transistor 174 and the drain of thedischarge transistor 172 may be integrated.

<24. Latch Circuit Output Control>

Next, read control on the latch signals Coln of the N latch circuits101′-1 through 101′-N of the latch storage unit 52 is described.

FIG. 66 is a circuit diagram related to read control on the latchstorage unit 52 and the sense amplifier unit 26 in each pixel 21. Thecircuit for write control is not shown in the drawing.

The N latch circuits 101′ of the latch storage unit 52 are connected torespective SA cores (sense amplifier core circuits) 471 of the senseamplifier unit 26 via the latch signal output lines 114, as shown inFIG. 66.

Capacitors 475 connected to the latch signal output lines 114, andtransistors 472 for precharging the capacitors 475 with a predeterminedpotential are provided between the latch circuits 101′ and the SA cores471.

As for the reading of the latch signals Coln, the capacitors 475 areprecharged with the predetermined potential by the transistors 472 priorto the reading, and the SA cores 471 determine whether the potential ofthe precharged capacitors 475 has been discharged with the latch signalsColn. In this manner, the reading of the latch signals Coln isperformed. For example, if the latch signals Coln are “1”, the potentialgiven through the precharging is discharged. If the latch signals Colnare “0”, the potential given through the precharging is maintained.

If the latch signals Coln of the N latch circuits 101′ of the latchstorage unit 52 in each pixel 21 are simultaneously read, coupling ofadjacent signal lines might occur due to the small space between theadjacent signal lines. As a result, an erroneous operation might beperformed.

To counter this in the solid-state imaging device 1 of the presentdisclosure, the WORD control lines 511 for transmitting read controlsignals WORD are divided into a WORD control line 511 on fortransmitting a control signal WORDon for the odd-numbered bits, and aWORD control line 511 en for transmitting a control signal WORDen forthe even-numbered bits, as shown in FIG. 66.

Also, xPC control lines 473 for transmitting a control signal xPC to thetransistors 472 that precharge the capacitors 475 are divided into anxPC control line 4730 for transmitting the control signal xPC to thetransistors 472 of the odd-numbered bits, and an xPC control line 473 efor transmitting the control signal xPC to the transistors 472 of theeven-numbered bits.

Further, EN control lines 474 for transmitting control signals ENcontrolling the times for the SA cores 471 to detect the latch signalsColn are divided into an EN control line 474 e for transmitting acontrol signal ENo to the SA cores 471 of the odd-numbered bits, and anEN control line 4740 for transmitting a control signal ENe to the SAcores 471 of the even-numbered bits.

In this solid-state imaging device 1, the control signal WORDon, thecontrol signal WORDen, the control signal ENo, and the control signalENe are input so that adjacent SA cores 471 perform different operationsfrom each other. Specifically, when the SA cores 471 of the odd-numberedbits are performing read operations on the latch circuits 101′, the SAcores 471 of the even-numbered bits perform precharge operations on thelatch circuits 101′. When the SA cores 471 of the odd-numbered bits areperforming precharge operations on the latch circuits 101′, on the otherhand, the SA cores 471 of the even-numbered bits perform read operationson the latch circuits 101′.

FIG. 67 is a timing chart of the latch storage unit 52 and the senseamplifier unit 26 shown in FIG. 66.

For comparison, FIG. 68 shows an example of interconnection between alatch storage unit 52X and a sense amplifier unit 26X in a case wherethe latch signals Coln of the N latch circuits 101′ are simultaneouslyread. FIG. 69 is a timing chart of driving of the latch storage unit 52Xand the sense amplifier unit 26X shown in FIG. 68.

Where the unit time required for reading once is T in the driving tosimultaneously read all the bits as shown in FIG. 68, the data (data ofN/2 bits) of the odd-numbered bits and the data of the even-numberedbits are alternately read at intervals of T/2 in the interleaved drivingto alternately read the odd-numbered bits and the even-numbered bits asshown in FIG. 67. The total read time in the interleaved driving is onlyT/2 longer than the total read time in the driving to simultaneouslyread all the pixels.

FIG. 70 shows an example of the interconnect layout of the latchcircuits 101′ in a case where the interleaved driving is performed toalternately read the odd-numbered bits and the even-numbered bits asshown in FIGS. 66 and 67.

The gates 111G of the transistors 111 to which output signals VCO areinput are integrally aligned in the middle, and the sources 111S and thedrains 111D of the transistors 111 of the odd-numbered bits and theeven-numbered bits are alternately arranged at upper portions and lowerportions.

The gates 112G of the transistors 112 to which read control signals WORDare input are aligned at upper portions and lower portions of the gates111G of the transistors 111 in the middle. The upper ones or the lowerones are for the even-numbered bits, and the other ones are for theodd-numbered bits.

The gates 113G of the transistors 113 are aligned on the outside of therespective gates 112G of the transistors 112. The upper ones or thelower ones are for the even-numbered bits, and the other ones are forthe odd-numbered bits.

As the odd-numbered bits and the even-numbered bits are alternatelyarranged as described above, the interconnect layout can be efficientlydesigned.

<25. Example Application to an Electronic Apparatus>

The present disclosure is not limited to application to solid-stateimaging devices. Specifically, the present disclosure can be applied toany electronic apparatus using a solid-state imaging device as an imagecapturing unit (a photoelectric conversion unit), such as an imagingapparatus like a digital still camera or a video camera, a mobileterminal device having an imaging function, or a copying machine using asolid-state imaging device as the image reader. A solid-state imagingdevice may be in the form of a single chip, or may be in the form of amodule that is formed by packaging an imaging unit and a signalprocessing unit or an optical system, and has an imaging function.

FIG. 71 is a block diagram showing an example structure of an imagingapparatus as an electronic apparatus according to the presentdisclosure.

The imaging apparatus 600 shown in FIG. 71 includes an optical unit 601formed with lenses and the like, a solid-state imaging device (animaging device) 602 having the structure of the solid-state imagingdevice 1 shown in FIG. 1, and a digital signal processor (DSP) circuit603 that is a camera signal processor circuit. The imaging apparatus 600also includes a frame memory 604, a display unit 605, a recording unit606, an operation unit 607, and a power supply unit 608. The DSP circuit603, the frame memory 604, the display unit 605, the recording unit 606,the operation unit 607, and the power supply unit 608 are connected toone another via a bus line 609.

The optical unit 601 gathers incident light (image light) from an objectand forms an image on the imaging surface of the solid-state imagingdevice 602. The solid-state imaging device 602 converts the amount ofthe incident light, which has been gathered as the image on the imagingsurface by the optical unit 601, into an electrical signal for eachpixel, and outputs the electrical signal as a pixel signal. Thissolid-state imaging device 602 may be the solid-state imaging device 1shown in FIG. 1, or a solid-state imaging device that reduces powerconsumption while increasing the determination speed of the comparator51 at the time when a pixel signal is subjected to AD conversion.

The display unit 605 is formed with a panel-type display device such asa liquid crystal panel or an organic electro-luminescence (EL) panel,and displays a moving image or a still image formed by the solid-stateimaging device 602. The recording unit 606 records the moving image orthe still image formed by the solid-state imaging device 602 into arecording medium such as a hard disk or a semiconductor memory.

When operated by a user, the operation unit 607 issues operatinginstructions as to various functions of the imaging apparatus 600. Thepower supply unit 608 supplies various power sources as the operationpower sources for the DSP circuit 603, the frame memory 604, the displayunit 605, the recording unit 606, and the operation unit 607, asappropriate.

As the solid-state imaging device 1 according to the above describedembodiment is used as the solid-state imaging device 602 as describedabove, power consumption can be reduced while the determination speed inAD conversion is increased. Thus, imaging at higher speed and smallerpower consumption can also be realized in the imaging apparatus 600 suchas a video camera, a digital still camera, or a camera module for mobiledevices such as portable telephones.

Although the comparator 51 and the ADC 42 have been described ascomponents incorporated into the solid-state imaging device 1, thecomparator 51 and the ADC 42 may be products (a comparator and an ADconverter) to be sold individually.

Also, the present disclosure can be applied not only to solid-stateimaging devices but also to semiconductor devices having othersemiconductor integrated circuits.

It should be noted that embodiments of the present disclosure are notlimited to the above described embodiments, and various modificationsmay be made to the above embodiments without departing from the scope ofthe present disclosure.

Although the circuit structures of the above described embodiments arecircuit structures in which charges are electrons, the presentdisclosure can also be applied to circuit structures in which chargesare holes. Also, in each of the above described circuit structures, thepolarities of transistors (the NMOS transistor and the PMOS transistor)may be reversed. In that case, the control signals to be input to thetransistors are reversed between Hi and Low.

In each of the above described embodiments, the reference signal REF isa slope signal that monotonically decreases in level (voltage) withtime. However, the reference signal REF may be a slope signal thatmonotonically increases in level (voltage) with time.

In each of the above described embodiments, four pixel circuits 41 areshared in a case where pixel circuits 41 are shared. However, the numberof shared pixel circuits 41 is not limited to four, and may be any othernumber (such as eight).

Other than the above, it is possible to employ a combination of all orsome of the above described embodiments. It is also possible to employan embodiment formed by combining other embodiments not described above.

The advantageous effects described in this specification are merelyexamples, and the advantageous effects of the present technology are notlimited to them and may include effects other than those described inthis specification.

The present disclosure may also be embodied in the structures describedbelow.

(1)

A comparator including:

a comparison unit that compares the voltage of an input signal with thevoltage of a reference signal, and outputs a comparison result signal;

a positive feedback circuit that increases the speed of transition atthe time when the comparison result signal is inverted; and

a current limiting unit that limits the current flowing in thecomparison unit after the inversion of the comparison result signal.

(2)

An AD converter including:

a comparator including:

-   -   a comparison unit that compares the voltage of an input signal        with the voltage of a reference signal, and outputs a comparison        result signal;    -   a positive feedback circuit that increases the speed of        transition at the time when the comparison result signal is        inverted; and    -   a current limiting unit that limits the current flowing in the        comparison unit after the inversion of the comparison result        signal; and

a storage unit that stores the code input signal at the time when thecomparison result signal is inverted, and outputs the code input signal.

(3)

The AD converter of (2), wherein the storage unit includes data storageunits corresponding to respective bits.

(4)

The AD converter of (2) or (3), wherein the storage unit stores the codeinput signal having three or more levels, and outputs the code inputsignal.

(5)

The AD converter of any one of (2) through (4), wherein the input linefor inputting the code input signal and the output line for outputtingthe stored code input signal as a code output signal are integrated.

(6)

The AD converter of any one of (2) through (5), further including

an inverter that inverts the comparison result signal having the speedincreased by the positive feedback circuit,

wherein the comparison result signal inverted by the inverter is outputto a later stage.

(7)

The AD converter of any one of (2) through (6), wherein:

the current limiting unit is formed with a transistor; and

the comparison unit includes a suppression transistor that suppresses acharacteristics difference in the transistor of the current limitingunit.

(8)

The AD converter of (7), wherein the suppression transistor iscontrolled in the same manner as the transistor of the current limitingunit.

(9)

The AD converter of any one of (2) through (8), wherein, after thecomparison result signal is inverted, the voltage of the referencesignal is set at the level at which the transistor to which thereference signal is input is turned off.

(10)

A solid-state imaging device including:

an AD converter including:

-   -   a comparator including:        -   a comparison unit that compares the voltage of an input            signal with the voltage of a reference signal, and outputs a            comparison result signal;        -   a positive feedback circuit that increases the speed of            transition at the time when the comparison result signal is            inverted; and        -   a current limiting unit that limits the current flowing in            the comparison unit after the inversion of the comparison            result signal; and    -   a storage unit that stores the code input signal at the time        when the comparison result signal is inverted, and outputs the        code input signal as a code output signal; and

a pixel circuit that outputs a charge signal as the input signal to thecomparison unit, the charge signal having been generated by receivinglight entering a pixel and photoelectrically converting the light.

(11)

The solid-state imaging device of (10), wherein:

the comparison unit includes at least a first transistor to which theinput signal is input, and a second transistor to which the referencesignal is input; and

the first transistor is connected to a floating diffusion layer of thepixel circuit holding the charge signal.

(12)

The solid-state imaging device of (11), wherein the voltage of thereference signal to be input to the second transistor is set at apredetermined voltage, to reset the floating diffusion layer of thepixel circuit.

(13)

The solid-state imaging device of (12), further including

a suppression transistor that suppresses a feedthrough current flowingin the positive feedback circuit when the voltage of the referencesignal to be input to the second transistor is set at a reset voltage atwhich the floating diffusion layer of the pixel circuit is reset.

(14)

The solid-state imaging device of any one of (10) through (13), wherein,after storing and outputting the code output signal at a reset level ofthe pixel, the storage unit of the AD converter stores and outputs thecode output signal at a signal level of the pixel.

(15)

The solid-state imaging device of any one of (10) through (14), whereinthe comparator is provided for the pixel circuit in one-to-onecorrespondence.

(16)

The solid-state imaging device of any one of (10) through (14), whereinthe comparator is provided for a plurality of the pixel circuits.

(17)

The solid-state imaging device of (16), wherein the voltage of thereference signal to be input to the second transistor is set at apredetermined voltage, to make at least one of the pixel circuitsnon-selected.

(18)

The solid-state imaging device of (16) or (17), wherein a plurality ofthe pixels are simultaneously read with a combination of color filters,a color of the combination of the color filters being white.

(19)

The solid-state imaging device of any one of (16) through (18), whereinthe simultaneously-read pixels form one image.

(20)

The solid-state imaging device of any one of (16) through (19), wherein:

the comparator is provided for M (M>1) of the pixel circuits; and

after outputting the input signal at a reset level of the M pixelcircuits to the comparison unit, the M pixel circuits sharing thecomparator outputs the input signal at a signal level of the M pixelcircuits to the comparison unit.

(21)

The solid-state imaging device of any one of (16) through (20), whereinthe pixel circuit includes at least a select transistor that controlsselection of the pixel.

(22)

The solid-state imaging device of (21), wherein the comparison unitincludes a suppression transistor that suppresses a characteristicsdifference caused by the select transistor.

(23)

The solid-state imaging device of any one of (10) through (22), wherein:

a pixel array unit in which a plurality of the pixels aretwo-dimensionally arranged is divided into a plurality of areas; and

the voltage of the reference signal is controlled in each of the areas.

(24)

The solid-state imaging device of (23), wherein the voltage of thereference signal in at least one of the areas is equal to or lower thana threshold voltage of the transistor to which the reference signal isinput.

(25)

The solid-state imaging device of any one of (10) through (24), which isformed with semiconductor substrates.

(25A)

The solid-state imaging device of (25), which is formed with a firstsemiconductor substrate and a second semiconductor substrate,

wherein the first semiconductor substrate and the second semiconductorsubstrate are connected by an input unit of the storage unit.

(25B)

The solid-state imaging device of (25), which is formed with a firstsemiconductor substrate and a second semiconductor substrate,

wherein the first semiconductor substrate and the second semiconductorsubstrate are connected by the drain and the source of the charge signalinput transistor of the comparison unit to which the charge signaloutput from the pixel circuit is input.

(25C)

The solid-state imaging device of (25), which is formed with a firstsemiconductor substrate and a second semiconductor substrate,

wherein the first semiconductor substrate and the second semiconductorsubstrate are connected by the drain of the charge signal inputtransistor of the comparison unit to which the charge signal output fromthe pixel circuit is input, and the drain of the reference signal inputtransistor of the comparison unit to which the reference signal isinput.

(25D)

The solid-state imaging device of (25), which is formed with firstthrough third semiconductor substrates,

wherein:

the first semiconductor substrate and the second semiconductor substrateare connected by the drain of the charge signal input transistor of thecomparison unit to which the charge signal output from the pixel circuitis input, and the drain of the reference signal input transistor of thecomparison unit to which the reference signal is input; and

the second semiconductor substrate and the third semiconductor substrateare connected by an input unit of the storage unit.

(25E)

The solid-state imaging device of (25), which is formed with stackedsubstrates formed by stacking semiconductor substrates, and a sidesubstrate joined to the sidewalls of the stacked substrates.

(26)

The solid-state imaging device of any one of (10) through (25), wherein:

the storage unit includes a P-phase storage unit that stores the codeoutput signal at a reset level of the pixel, and a D-phase storage unitthat stores the code output signal at a signal level of the pixel; and

the P-phase storage unit and the D-phase storage unit simultaneouslyoutput the code output signal at the reset level of the pixel and thecode output signal at the signal level.

(27)

The solid-state imaging device of any one of (10) through (26), whereinthe pixel circuit includes a transistor that changes the capacitance ofthe floating diffusion layer holding the charge signal until the chargesignal is output to the comparison unit.

(28)

The solid-state imaging device of any one of (10) through (27), whereinthe voltage change rate of the reference signal is changed at least oncein one vertical scan period.

(29)

The solid-state imaging device of any one of (10) through (28), whereinthe frequency of a signal to be the code value is changed at least oncein one vertical scan period.

(30)

The solid-state imaging device of any one of (10) through (29), whereinthe pixel circuit outputs the charge signal amplified by a sourcefollower circuit as the input signal to the comparison unit.

(30A)

The solid-state imaging device of any one of (10) through (30), whereinthe comparator further includes a capacitor connected between a powersupply and GND.

(30B)

The solid-state imaging device of any one of (10) through (30A), whereinthe storage unit includes a data storage unit that stores 1-bit data,and repeatedly stores and outputs the code output signal the same numberof times as the number of AD conversion bits.

(30C)

The solid-state imaging device of any one of (10) through (30B),wherein:

the storage unit includes two data storage units that store the codeoutput signal; and

the code input signal in the two data storage units is a differentialsignal, and the stored code output signal is a differential signal.

(30D)

The solid-state imaging device of any one of (10) through (30C), whereinthe last code input signal in a reset detection period for detecting areset level of the pixel is set at a predetermined value and is input tothe storage unit.

(30E)

The solid-state imaging device of (30D), wherein the predetermined valueis the voltage value generated when light impinges on the floatingdiffusion layer of the pixel circuit.

(30F)

The solid-state imaging device of any one of (10) through (30E),wherein:

a pixel array unit in which a plurality of the pixels aretwo-dimensionally arranged is horizontally divided into areas; and

the time to input the code input signal varies among the respectiveareas.

(31)

The solid-state imaging device of any one of (10) through (12), furtherincluding

an output unit configured to calculate a black level from a black outputpixel for black level correction in a pixel array unit in which aplurality of the pixels are two-dimensionally arranged, subtract theblack level from pixel signals of the pixels, and output the pixelsignals.

(31A)

The solid-state imaging device of (31), wherein the output unitcalculates the black level, using a plurality of the black output pixelsarranged in a direction parallel to a power supply line.

(31B)

The solid-state imaging device of (31), wherein the output unitcalculates the black level, using a plurality of the black output pixelsarranged in a direction parallel to a GND line.

(31C)

The solid-state imaging device of (31), wherein the black output pixelis a regular pixel that is driven without charge transfer.

(31D)

The solid-state imaging device of (31), wherein the black output pixelis a phase difference detection pixel that is driven without chargetransfer.

(31E)

The solid-state imaging device of (31), wherein the black output pixelis a regular pixel in a pixel row that is driven without chargetransfer.

(32)

The solid-state imaging device of any one of (10) through (31), wherein:

the pixel circuit includes a reset transistor that resets the floatingdiffusion layer holding the charge signal; and

the drain of the reset transistor is connected to a power supplyvoltage.

(33)

The solid-state imaging device of any one of (10) through (32), furtherincluding

a code reading unit that reads the code output signal stored in thestorage unit by performing a precharge operation and a read operation,

wherein the code reading unit performs the read operation when anadjacent code reading unit is performing the precharge operation.

(34)

An electronic apparatus including

a solid-state imaging device including:

-   -   an AD converter including:        -   a comparator including:        -   a comparison unit configured to compare a voltage of an            input signal with a voltage of a reference signal, and            output a comparison result signal;        -   a positive feedback circuit configured to increase a speed            of transition at a time when the comparison result signal is            inverted; and        -   a current limiting unit configured to limit a current            flowing in the comparison unit after the inversion of the            comparison result signal; and    -   a storage unit configured to store a code input signal at the        time when the comparison result signal is inverted, and output        the code input signal as a code output signal; and

a pixel circuit configured to output a charge signal as the input signalto the comparison unit, the charge signal having been generated byreceiving light entering a pixel and photoelectrically converting thelight.

(35)

A method of controlling a comparator including a comparison unit, apositive feedback circuit, and a current limiting unit,

the method including:

the comparison unit comparing the voltage of an input signal with thevoltage of a reference signal, and outputting a comparison resultsignal;

the positive feedback circuit increasing the speed of transition at thetime when the comparison result signal is inverted; and

the current limiting unit limiting the current flowing in the comparisonunit after the inversion of the comparison result signal.

REFERENCE SIGNS LIST

-   1 Solid-state imaging device-   21 Pixel-   22 Pixel array unit-   24 DAC-   26 Sense amplifier unit-   27 Output unit-   41 Pixel circuit-   42 ADC-   51 Comparator-   52 Latch storage unit-   61 Differential amplifier circuit-   62 Positive feedback circuit-   63 Current limiting unit-   81, 82, 86 Transistor-   121 Inverter-   141 Transistor-   174 Reset transistor-   175 FD-   176 Select transistor-   181 PMOS transistor-   211 Transistor-   322P P-phase latch unit-   322D D-phase latch unit-   341, 342 NMOS transistor-   361 Capacitor-   381, 381X Latch unit-   600 Imaging apparatus-   602 Solid-state imaging device

What is claimed is: 1-35. (canceled)
 36. A solid-state imaging devicecomprising: an analog-to-digital (“AD”) converter including: acomparator including: a comparison unit configured to compare a voltageof an input signal with a voltage of a reference signal and output acomparison result signal, and a positive feedback circuit configured toincrease a speed of transition at a time when the comparison resultsignal is inverted; and a storage unit configured to store a code inputsignal at the time when the comparison result signal is inverted andoutput the code input signal as a code output signal; and a pixelcircuit configured to output a charge signal as the input signal to thecomparison unit, the charge signal having been generated by receivinglight entering a pixel and photoelectrically converting the light,wherein: the comparison unit includes at least a first transistor towhich the input signal is input and a second transistor to which thereference signal is input; the first transistor is connected to afloating diffusion layer of the pixel circuit holding the charge signal;and the voltage of the reference signal to be input to the secondtransistor is set at a predetermined voltage to reset the floatingdiffusion layer of the pixel circuit.
 37. The solid-state imaging deviceaccording to claim 36, wherein after storing and outputting the codeoutput signal at a reset level of the pixel, the storage unit of the ADconverter stores and outputs the code output signal at a signal level ofthe pixel.
 38. The solid-state imaging device according to claim 36,wherein the comparator is provided for the pixel circuit in one-to-onecorrespondence.
 39. The solid-state imaging device according to claim 1,further comprising a number of pixel circuits, wherein the comparator isprovided for a plurality of the pixel circuits.
 40. A solid-stateimaging device comprising: an analog-to-digital (“AD”) converterincluding: a comparator including: a comparison unit configured tocompare a voltage of an input signal with a voltage of a referencesignal and output a comparison result signal, wherein the comparisonunit includes at least a first transistor to which the input signal isinput, and a second transistor to which the reference signal is input;and a positive feedback circuit configured to increase a speed oftransition at a time when the comparison result signal is inverted; anda storage unit configured to store a code input signal at the time whenthe comparison result signal is inverted and output the code inputsignal as a code output signal; and a number pixels, wherein each pixelincludes a pixel circuit configured to output a charge signal as theinput signal to the comparison unit, the charge signal having beengenerated by receiving light entering each respective pixel andphotoelectrically converting the light, wherein the comparator isprovided for a plurality of the pixel circuits, and wherein the voltageof the reference signal to be input to the second transistor is set at apredetermined voltage to make at least one pixel circuit non-selected.41. A solid-state imaging device comprising: an analog-to-digital (“AD”)converter including: a comparator including: a comparison unitconfigured to compare a voltage of an input signal with a voltage of areference signal and output a comparison result signal; and a positivefeedback circuit configured to increase a speed of transition at a timewhen the comparison result signal is inverted; and a storage unitconfigured to store a code input signal at the time when the comparisonresult signal is inverted and output the code input signal as a codeoutput signal; and a number of pixels, wherein each pixel includes apixel circuit configured to output a charge signal as the input signalto the comparison unit, the charge signal having been generated byreceiving light entering each respective pixel and photoelectricallyconverting the light, wherein the comparator is provided for a pluralityof the pixel circuits, and wherein a plurality of the pixels aresimultaneously read with a combination of color filters, a color of thecombination of the color filters being white.
 42. A solid-state imagingdevice comprising: an analog-to-digital (“AD”) converter including: acomparator including: a comparison unit configured to compare a voltageof an input signal with a voltage of a reference signal and output acomparison result signal; and a positive feedback circuit configured toincrease a speed of transition at a time when the comparison resultsignal is inverted; and a storage unit configured to store a code inputsignal at the time when the comparison result signal is inverted andoutput the code input signal as a code output signal; and a number ofpixels, wherein each of the pixels includes a pixel circuit configuredto output a charge signal as the input signal to the comparison unit,the charge signal having been generated by receiving light entering therespective pixel and photoelectrically converting the light, wherein thecomparator is provided for a plurality of the pixel circuits, andwherein simultaneously-read pixels form one image.
 43. A solid-stateimaging device comprising: an analog-to-digital (“AD”) converterincluding: a comparator including: a comparison unit configured tocompare a voltage of an input signal with a voltage of a referencesignal and output a comparison result signal; and a positive feedbackcircuit configured to increase a speed of transition at a time when thecomparison result signal is inverted; and a storage unit configured tostore a code input signal at the time when the comparison result signalis inverted and output the code input signal as a code output signal;and a number of pixels, wherein each of the pixels includes a pixelcircuit configured to output a charge signal as the input signal to thecomparison unit, the charge signal having been generated by receivinglight entering the respective pixel and photoelectrically converting thelight, wherein the comparator is provided for a plurality of the pixelcircuits, and wherein: the comparator is provided for M of the pixelcircuits, wherein M is greater than one; and after outputting the inputsignal at a reset level of the M pixel circuits to the comparison unit,the M pixel circuits sharing the comparator output the input signal at asignal level of the M pixel circuits to the comparison unit.
 44. Thesolid-state imaging device according to claim 43, wherein the pixelcircuits include at least a select transistor configured to controlselection of each respective pixel.
 45. The solid-state imaging deviceaccording to claim 44, wherein the comparison unit includes asuppression transistor configured to suppress a characteristicsdifference caused by the select transistor.
 46. A solid-state imagingdevice comprising: an analog-to-digital (“AD”) converter including: acomparator including: a comparison unit configured to compare a voltageof an input signal with a voltage of a reference signal and output acomparison result signal; and a positive feedback circuit configured toincrease a speed of transition at a time when the comparison resultsignal is inverted; and a storage unit configured to store a code inputsignal at the time when the comparison result signal is inverted andoutput the code input signal as a code output signal; and a pixelcircuit configured to output a charge signal as the input signal to thecomparison unit, the charge signal having been generated by receivinglight entering a pixel and photoelectrically converting the light,wherein: a pixel array unit in which a plurality of the pixels aretwo-dimensionally arranged is divided into a plurality of areas; and thevoltage of the reference signal is controlled in each of the areas. 47.The solid-state imaging device according to claim 46, wherein thevoltage of the reference signal in at least one of the areas is equal toor lower than a threshold voltage of a transistor to which the referencesignal is input.
 48. The solid-state imaging device according to claim36, wherein the solid-state imaging device is formed with a plurality ofsemiconductor substrates.
 49. A solid-state imaging device comprising:an analog-to-digital (“AD”) converter including: a comparator including:a comparison unit configured to compare a voltage of an input signalwith a voltage of a reference signal and output a comparison resultsignal; and a positive feedback circuit configured to increase a speedof transition at a time when the comparison result signal is inverted;and a storage unit configured to store a code input signal at the timewhen the comparison result signal is inverted and output the code inputsignal as a code output signal; and a pixel circuit configured to outputa charge signal as the input signal to the comparison unit, the chargesignal having been generated by receiving light entering a pixel andphotoelectrically converting the light, wherein: the storage unitincludes a P-phase storage unit configured to store the code outputsignal at a reset level of the pixel and a D-phase storage unitconfigured to store the code output signal at a signal level of thepixel; and the P-phase storage unit and the D-phase storage unitsimultaneously output the code output signal at the reset level of thepixel and the code output signal at the signal level.
 50. A solid-stateimaging device comprising: an analog-to-digital (“AD”) converterincluding: a comparator including: a comparison unit configured tocompare a voltage of an input signal with a voltage of a referencesignal and output a comparison result signal; and a positive feedbackcircuit configured to increase a speed of transition at a time when thecomparison result signal is inverted; and a storage unit configured tostore a code input signal at the time when the comparison result signalis inverted and output the code input signal as a code output signal;and a pixel circuit configured to output a charge signal as the inputsignal to the comparison unit, the charge signal having been generatedby receiving light entering a pixel and photoelectrically converting thelight, wherein the pixel circuit includes a transistor configured tochange a capacitance of a floating diffusion layer holding the chargesignal until the charge signal is output to the comparison unit.
 51. Thesolid-state imaging device according to claim 50, wherein a voltagechange rate of the reference signal is changed at least once in onevertical scan period.
 52. A solid-state imaging device comprising: an ADconverter including: a comparator including: a comparison unitconfigured to compare a voltage of an input signal with a voltage of areference signal and output a comparison result signal; and a positivefeedback circuit configured to increase a speed of transition at a timewhen the comparison result signal is inverted; and a storage unitconfigured to store a code input signal at the time when the comparisonresult signal is inverted and output the code input signal as a codeoutput signal; and a pixel circuit configured to output a charge signalas the input signal to the comparison unit, the charge signal havingbeen generated by receiving light entering a pixel and photoelectricallyconverting the light, wherein a frequency of the code input signal ischanged at least once in one vertical scan period.
 53. The solid-stateimaging device according to claim 52, wherein the pixel circuit outputsthe charge signal amplified by a source follower circuit as the inputsignal to the comparison unit.
 54. The solid-state imaging deviceaccording to claim 52, further comprising an output unit configured tocalculate a black level from a black output pixel for black levelcorrection in a pixel array unit in which a plurality of the pixels aretwo-dimensionally arranged, subtract the black level from pixel signalsof the pixels, and output the pixel signals.
 55. The solid-state imagingdevice according to claim 52, wherein: the pixel circuit includes: areset transistor configured to reset a floating diffusion layer holdingthe charge signal; and a drain of the reset transistor is connected to apower supply voltage.
 56. A solid-state imaging device comprising: ananalog-to-digital (“AD”) converter including: a comparator including: acomparison unit configured to compare a voltage of an input signal witha voltage of a reference signal and output a comparison result signal;and a positive feedback circuit configured to increase a speed oftransition at a time when the comparison result signal is inverted; anda storage unit configured to store a code input signal at the time whenthe comparison result signal is inverted and output the code inputsignal as a code output signal; a pixel circuit configured to output acharge signal as the input signal to the comparison unit, the chargesignal having been generated by receiving light entering a pixel andphotoelectrically converting the light; and a code reading unitconfigured to read the code output signal stored in the storage unit byperforming a precharge operation and a read operation, wherein the codereading unit performs the read operation when an adjacent code readingunit is performing the precharge operation.
 57. A comparator comprising:a comparison unit configured to output a comparison result signal basedon a comparison of a voltage of an input signal with a voltage of areference signal, wherein the comparison unit includes at least a firsttransistor to which the input signal is input and at least a secondtransistor to which the reference signal is input, wherein the firsttransistor is connected to a floating diffusion layer of a pixelcircuit, wherein the voltage of the reference signal is set at apredetermined voltage to reset the floating diffusion layer of the pixelcircuit; and a positive feedback circuit configured to increase a speedof transition when the comparison result signal is inverted, whereinwhen the comparison result signal is inverted a code input signal isstored in a storage unit.